PSMN070-200P NXP Semiconductors, PSMN070-200P Datasheet
PSMN070-200P
Specifications of PSMN070-200P
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PSMN070-200P Summary of contents
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... DISCRETE SEMICONDUCTORS DATA SHEET PSMN070-200B; PSMN070-200P N-channel TrenchMOS transistor Product specification (TM) August 1999 ...
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... SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications:- • d.c. to d.c. converters • switched mode power supplies The PSMN070-200P is supplied in the SOT78 (TO220AB) conventional leaded package. The PSMN070-200B is supplied in the SOT404 surface mounting package. PINNING PIN DESCRIPTION ...
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... Internal drain inductance d L Internal source inductance s C Input capacitance iss C Output capacitance oss C Feedback capacitance rss August 1999 (TM) transistor PSMN070-200B; PSMN070-200P CONDITIONS Unclamped inductive load 100 s; T prior to avalanche = 25˚ fig:15 CONDITIONS SOT78 package, in free air SOT404 package, pcb mounted, minimum ...
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... SYMBOL PARAMETER I Continuous source current S (body diode) I Pulsed source current (body SM diode) V Diode forward voltage SD t Reverse recovery time rr Q Reverse recovery charge rr August 1999 (TM) transistor PSMN070-200B; PSMN070-200P CONDITIONS -dI /dt = 100 Product specification MIN. TYP. MAX. UNIT - - 35 ...
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... 100 100 ms 100 1000 p 5 PSMN070-200B; PSMN070-200P Transient thermal impedance, Zth j-mb (K/ 0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.001 1E-06 1E-05 1E-04 1E-03 1E-02 Pulse width, tp (s) Fig.4. Transient thermal impedance f(t); parameter ...
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... Fig.9. Normalised drain-source on-state resistance DS(ON) DS(ON)25 ˚C August 1999 (TM) transistor 175 175 ˚ 100 120 140 160 180 = f PSMN070-200B; PSMN070-200P Threshold Voltage, VGS(TO) (V) 4.5 4 maximum 3.5 typical 3 2.5 minimum 2 1.5 1 0.5 0 -60 -40 - Junction Temperature, Tj (C) Fig.10. Gate threshold voltage f(T ); conditions mA; V GS(TO Drain current, ID (A) 1 ...
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... VDD = 160 100 ) 0.7 0.8 0.9 1 1.1 1 parameter PSMN070-200B; PSMN070-200P Maximum Avalanche Current, I (A) AS 100 10 Tj prior to avalanche = 150 C 1 0.001 0.01 0.1 Avalanche time Fig.15. Maximum permissible non-repetitive avalanche current (I ) versus avalanche time (t AS unclamped inductive load Product specification ...
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... 0.9 1.3 0.7 15.8 6.4 10.3 2.54 0.7 1.0 0.4 15.2 5.9 9.7 REFERENCES IEC JEDEC EIAJ TO-220 8 PSMN070-200B; PSMN070-200P ( max. 15.0 3.30 3.8 3.0 2.6 3.0 13.5 2.79 3.6 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION 97-06-11 Product specification SOT78 Rev 1 ...
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... 2 scale max. 0.85 0.64 1.60 10.30 2.90 11 2.54 0.60 0.46 1.20 9.70 2.10 REFERENCES IEC JEDEC EIAJ 9 PSMN070-200B; PSMN070-200P 2 -PAK); 3 leads SOT404 mounting base 15.40 2.60 14.80 2.20 EUROPEAN ISSUE DATE PROJECTION 98-12-14 99-06-25 Product specification Rev 1.000 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1999 (TM) transistor PSMN070-200B; PSMN070-200P 11.5 9.0 2.0 3.8 5.08 Fig ...
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... Philips Semiconductors N-channel TrenchMOS August 1999 (TM) transistor PSMN070-200B; PSMN070-200P NOTES 11 Product specification Rev 1.000 ...
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Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + 101 ...