BF1204 NXP Semiconductors, BF1204 Datasheet - Page 9

• Manufacturer Part Number: BF1204
• Description: Two dual-gate MOS Field-Effect Transistors in a plastic SOT363 package
• Manufacturer: NXP Semiconductors

Specifications of BF1204

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 10V
• Power Gain (typ)@vds: 34@5VdB
• Noise Figure (max): 11dB
• Package Type: SOT-363
• Pin Count: 6
• Input Capacitance (typ)@vds: 1.7@5V@Gate 1/3.3@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.85@5VpF
• Reverse Capacitance (typ): 0.015@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
Scattering parameters
V
2010 Sep 16
handbook, full pagewidth
(MHz)
DS
1000
100
200
300
400
500
600
700
800
900
Dual N-channel dual gate MOS-FET
50
f
= 5 V; V
MAGNITUDE
G2-S
(ratio)
0.991
0.987
0.981
0.969
0.958
0.939
0.921
0.898
0.874
0.847
0.817
= 4 V; I
s
11
D
= 12 mA; T
ANGLE
14.21
21.22
28.14
35.01
41.75
48.51
54.96
61.62
67.84
R GEN
3.29
7.12
(deg)
50 Ω
V I
Fig.19 Cross-modulation test set-up (for one MOS-FET).
amb
50 Ω
MAGNITUDE
R2
= 25 C.
(ratio)
2.95
2.90
2.86
2.83
2.79
2.74
2.68
2.62
2.55
2.49
2.41
4.7 nF
C2
s
V GG
21
10 kΩ
R G1
R1
V AGC
ANGLE
175.78
171.61
163.45
155.11
147.37
139.04
131.35
123.38
115.74
107.84
100.24
(deg)
4.7 nF
C1
9
MAGNITUDE
DUT
0.00060
0.00234
0.00339
0.00429
0.00508
0.00565
0.00646
0.00662
0.00670
0.00119
0.00611
(ratio)
V DS
L1
≈
4.7 nF
4.7 nF
2.2 μH
s
C3
C4
12
ANGLE
85.25
84.74
80.85
75.77
72.23
68.24
64.97
61.90
57.77
55.04
52.16
(deg)
MGS315
R L
50 Ω
MAGNITUDE
(ratio)
0.995
0.994
0.992
0.989
0.987
0.983
0.981
0.976
0.973
0.969
0.966
Product specification
s
BF1204
22
ANGLE
11.25
13.96
16.67
19.36
22.04
24.80
27.45
(deg)
1.44
2.90
5.70
8.50