BF 2030 E6327 Infineon Technologies, BF 2030 E6327 Datasheet

BF 2030 E6327

Manufacturer Part Number
BF 2030 E6327
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BF 2030 E6327

Channel Type
N
Channel Mode
Depletion
Continuous Drain Current
0.04A
Drain Source Voltage (max)
8V
Power Gain (typ)@vds
23@5VdB
Noise Figure (max)
2.2dB
Frequency (max)
1GHz
Package Type
SOT-143
Pin Count
3 +Tab
Forward Transconductance (typ)
0.031S
Input Capacitance (typ)@vds
2.4@5V@Gate 1pF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
Silicon N-Channel MOSFET Tetrode
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Class 2 (2000V - 4000V) pin to pin Human Body Model
Type
BF2030
BF2030R
BF2030W
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
T
T
Storage temperature
Channel temperature
1
Pb-containing package may be available upon special request
S
S
For low noise, high gain controlled
Operating voltage 5V
Pb-free (RoHS compliant) package
Qualified according AEC Q101
input stages up to 1GHz
AGC
Input
76 °C, BF2030, BF2030R
94 °C, BF2030W
RF
RG1
VGG
G2
G1
Package
SOT143
SOT143R
SOT343
GND
Drain
1= S
1= D
1= D
RF Output
+ DC
1)
2=D
2=S
2=S
1
Pin Configuration
3=G2
3=G1
3=G1
Symbol
V
I
+V
P
T
T
D
I
stg
ch
DS
tot
G1/2SM
G1SE
4=G1
4=G2
4=G2
-
-
-
-55 ... 150
Value
200
200
150
40
10
8
6
-
-
-
BF2030...
2007-04-20
Marking
NDs
NDs
NDs
Unit
V
mA
V
mW
°C

Related parts for BF 2030 E6327

BF 2030 E6327 Summary of contents

Page 1

Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Pb-free (RoHS compliant) package Qualified according AEC Q101 G2 AGC G1 RF Input RG1 GND VGG ESD (Electrostatic discharge) sensitive device, observe ...

Page 2

Thermal Resistance Parameter 1) Channel - soldering point BF2030/ BF2030R BF2030W Electrical Characteristics at T Parameter DC Characteristics Drain-source breakdown voltage µ G1S G2S Gate1-source breakdown voltage + mA, ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Forward transconductance mA G2S Gate1 input capacitance mA G2S ...

Page 4

Total power dissipation P BF2030, BF2030R 220 mW 180 160 140 120 100 Drain current G2S ...

Page 5

Gate 1 current G1S Parameter G2S 210 µA 180 165 150 135 120 105 0.4 0.8 1.2 1.6 Drain current I = ...

Page 6

Drain current G2S R = Parameter Crossmodulation V ...

Page 7

Cossmodulation test circuit R GEN AGC DS 4n7 R1 10k 2.2 uH 4n7 4n7 50 RG1 BF2030... 4n7 RL 50 Semibiased 2007-04-20 ...

Page 8

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 0.25 B ...

Page 9

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143R 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 1.7 0.2 ...

Page 10

Package Outline +0.1 0.3 -0.05 4x 0.1 Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 2 ±0.2 0.1 MAX. 1.3 0 0.15 1 ...

Page 11

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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