BF1204 NXP Semiconductors, BF1204 Datasheet - Page 8

• Manufacturer Part Number: BF1204
• Description: Two dual-gate MOS Field-Effect Transistors in a plastic SOT363 package
• Manufacturer: NXP Semiconductors

Specifications of BF1204

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 10V
• Power Gain (typ)@vds: 34@5VdB
• Noise Figure (max): 11dB
• Package Type: SOT-363
• Pin Count: 6
• Input Capacitance (typ)@vds: 1.7@5V@Gate 1/3.3@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.85@5VpF
• Reverse Capacitance (typ): 0.015@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2010 Sep 16
handbook, halfpage
handbook, halfpage
Dual N-channel dual gate MOS-FET
V
Fig.15 Input admittance as a function of frequency;
V
Fig.17 Forward transfer admittance and phase as
DS
DS
(mS)
(mS)
Y is
10
y fs
10
10
= 5 V; V
= 5 V; V
10
10
−1
1
1
2
2
10
10
typical values.
a function of frequency; typical values.
G2
G2
= 4 V.
= 4 V.
10
10
2
2
ϕ fs
y fs
b is
f (MHz)
f (MHz)
g is
MLD429
MLD431
10
10
3
3
−10
(deg)
−10
−1
ϕ fs
2
8
handbook, halfpage
handbook, halfpage
V
Fig.16 Reverse transfer admittance and phase as
V
Fig.18 Output admittance as a function of
DS
DS
(mS)
(μS)
Y os
10
10
y rs
10
10
= 5 V; V
= 5 V; V
10
10
−1
−2
1
1
3
2
10
10
a function of frequency; typical values.
frequency; typical values.
G2
G2
= 4 V.
= 4 V.
10
10
2
2
y rs
b os
g os
ϕ rs
f (MHz)
f (MHz)
Product specification
BF1204
MLD430
MLD432
10
10
3
3
−10
(deg)
−10
−10
−1
ϕ rs
3
2