BF1204 NXP Semiconductors, BF1204 Datasheet - Page 2

• Manufacturer Part Number: BF1204
• Description: Two dual-gate MOS Field-Effect Transistors in a plastic SOT363 package
• Manufacturer: NXP Semiconductors

Specifications of BF1204

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 10V
• Power Gain (typ)@vds: 34@5VdB
• Noise Figure (max): 11dB
• Package Type: SOT-363
• Pin Count: 6
• Input Capacitance (typ)@vds: 1.7@5V@Gate 1/3.3@5V@Gate 2pF
• Output Capacitance (typ)@vds: 0.85@5VpF
• Reverse Capacitance (typ): 0.015@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
FEATURES
 Two low noise gain controlled amplifiers in a single
 Superior cross-modulation performance during AGC
 High forward transfer admittance
 High forward transfer admittance to input capacitance
APPLICATIONS
 Gain controlled low noise amplifiers for VHF and UHF
DESCRIPTION
The BF1204 is a combination of two equal dual gate
MOS-FET amplifiers with shared source and gate 2 leads.
The source and substrate are interconnected. Internal bias
circuits enable DC stabilization and a very good
cross-modulation performance during AGC. Integrated
diodes between the gates and source protect against
excessive input voltage surges. The transistor has a
SOT363 micro-miniature plastic package.
QUICK REFERENCE DATA
Note
1. T
2010 Sep 16
Per MOS-FET; unless otherwise specified
V
I
P
y
C
C
NF
X
T
SYMBOL
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
D
package
ratio.
applications with 3 to 9 V supply voltage, such as digital
and analog television tuners and professional
communications equipment.
j
DS
tot
mod
Dual N-channel dual gate MOS-FET
ig1-s
rss
fs

s
is the temperature at the soldering point of the source lead.
drain-source voltage
drain current (DC)
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
cross-modulation
operating junction temperature
PARAMETER
T
I
I
f = 1 MHz
f = 800 MHz
input level for k = 1% at 40 dB AGC 100
D
D
s
= 12 mA; f = 1 MHz
= 12 mA; f = 1 MHz
 102 C; note 1
CAUTION
2
CONDITIONS
PINNING - SOT363
handbook, halfpage
Marking code: L3*
Top view
1
6
PIN
1
2
3
4
5
6
Fig.1 Simplified outline and symbol.
5
2
4
3
gate 1 (a)
gate 2
gate 1 (b)
drain (b)
source
drain (a)



25




MIN.
g1 (a)
* = - : made in Hong Kong
* = p : made in Hong Kong
* = t : made in Malaysia
AMP
d (a)
DESCRIPTION
a



30
1.7
15
1.1
105

TYP.
Product specification
g2
s
10
30
200
40
2.2

1.8

150
MAX.
g1 (b)
BF1204
AMP
d (b)
b
MBL252
V
mA
mW
mS
pF
fF
dB
dBV
C
UNIT