BF904WR NXP Semiconductors, BF904WR Datasheet - Page 7

• Manufacturer Part Number: BF904WR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

Specifications of BF904WR

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 7V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1/1.5@5V@Gate 2pF
• Output Capacitance (typ)@vds: 1.3@5VpF
• Reverse Capacitance (typ): 0.025@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 280mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2010 Sep 15
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FET
V
R
V
R
Fig.13 Drain current as a function of gate 2 voltage;
(mA)
DS
DS
G1
G
(mA)
I D
I D
= 120 k (connected to V
= 5 V; V
= 120 k (connected to V
Fig.11 Drain current as a function of gate 1
= 5 V; T
12
12
8
4
0
8
4
0
0
0
typical values; see Fig.19.
G2-S
j
= 25 C.
supply voltage (= V
see Fig.19.
= 4 V.
1
2
GG
2
GG
).
); T
j
= 25 C.
3
GG
4
); typical values;
V
GG
V
G2 S
4
V
= 5 V
GG
4.5 V
4 V
3.5 V
3 V
MLD275
MLD276
(V)
(V)
6
5
7
handbook, halfpage
handbook, halfpage
V
R
V
R
G2-S
DS
G1
G
(mA)
(μA)
I G1
I D
= 120 k (connected to V
connected to V
= 5 V; T
Fig.14 Gate 1 current as a function of gate 2
20
15
10
= 4 V.
Fig.12 Drain current as a function of gate 1
40
30
20
10
5
0
0
0
0
j
= 25 C.
voltage; typical values; see Fig.19.
(= V
typical values; see Fig.19.
GG
2
GG
; T
j
) and drain supply voltage;
R
= 25 C.
2
G1
GG
= 47 kΩ
).
4
V
GG
68 kΩ
4
Product specification
V
= V
V
6
GG
G2 S
BF904WR
DS
= 5 V
100 kΩ
120 kΩ
150 kΩ
180 kΩ
220 kΩ
(V)
4.5 V
4 V
3.5 V
3 V
MLD274
82 kΩ
MLB945
(V)
8
6