BF904 NXP Semiconductors, BF904 Datasheet

Enhancement type Field-Effect Transistor in a plastic SOT143B package

BF904

Manufacturer Part Number
BF904
Description
Enhancement type Field-Effect Transistor in a plastic SOT143B package
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF904

Application
VHF/UHF
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
0.03A
Drain Source Voltage (max)
7V
Noise Figure (max)
2.8dB
Frequency (max)
1GHz
Package Type
SOT
Pin Count
3 +Tab
Input Capacitance (typ)@vds
2.2@5V@Gate 1/1.5@5V@Gate 2pF
Output Capacitance (typ)@vds
1.3@5VpF
Reverse Capacitance (typ)
0.025@5VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant

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Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
http://www.philips.semiconductors.com use http://www.nxp.com
http://www.semiconductors.philips.com use http://www.nxp.com (Internet)
sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com
(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your
cooperation and understanding,
NXP Semiconductors
BF904; BF904R
N-channel dual gate MOS-FETs
Rev. 06 — 13 November 2007
IMPORTANT NOTICE
Product data sheet

Related parts for BF904

BF904 Summary of contents

Page 1

... BF904; BF904R N-channel dual gate MOS-FETs Rev. 06 — 13 November 2007 IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below ...

Page 2

... Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source handbook, halfpage Top view MAM124 BF904 marking code: %MC. Fig.1 Simplified outline (SOT143B) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER V drain-source voltage DS I drain current ...

Page 3

... P tot (mW) 200 BF904 150 BF904R 100 100 Fig.3 Power derating curves. CONDITIONS see Fig note 1 amb note 1 amb MRA770 150 200 o T amb ( C) Rev November 2007 Product specification BF904; BF904R MIN. MAX. UNIT 200 mW 200 mW 65 +150 C 150 ...

Page 4

... 120 k ; note G2 G1 see Fig.20 mA; unless otherwise specified. DS G2-S D CONDITIONS pulsed MHz MHz MHz f = 200 MHz mS 800 MHz Rev November 2007 BF904; BF904R CONDITIONS VALUE note 1 500 550 note 290 360 s CONDITIONS MIN G1 G2 0.5 S- 0 ...

Page 5

... Fig.6 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; see Fig.20. MLD268 handbook, halfpage reduction 100 150 MHz. MRA771 gain reduction (dB Rev November 2007 Product specification BF904; BF904R 0 gain (dB Fig.5 Typical gain reduction as a function of the AGC voltage (mA ...

Page 6

... Fig.10 Forward transfer admittance as a function of drain current; typical values. MLD269 handbook, halfpage ( MLD272 handbook, halfpage 3 2 (mA Fig.11 Drain current as a function of gate 1 current; Rev November 2007 BF904; BF904R 150 100 0.5 1.0 1 Fig.9 Gate 1 current as a function of gate 1 voltage; typical values (mA ...

Page 7

... Fig.14 Drain current as a function of gate 2 voltage; typical values; see Fig.20. MLD275 handbook, halfpage ( typical values; GG MLD276 handbook, halfpage Rev November 2007 BF904; BF904R (mA G2-S connected Fig.13 Drain current as a function of gate and drain supply voltage; GG typical values; see Fig.20. 40 ...

Page 8

... (MHz mA Fig.17 Reverse transfer admittance and phase as MLD279 2 10 handbook, halfpage y os (mS) fs (deg (MHz mA Rev November 2007 Product specification BF904; BF904R (MHz amb a function of frequency; typical values (MHz amb Fig.19 Output admittance as a function of frequency; typical values. MLD278 3 10 ...

Page 9

... NXP Semiconductors N-channel dual gate MOS-FETs R GEN AGC 4 DUT 4 Fig.20 Cross-modulation test set-up. Rev November 2007 Product specification BF904; BF904R 450 nH C4 4.7 nF MLD171 ...

Page 10

... G2 min (dB) (ratio) 2.00 0.686 Rev November 2007 Product specification BF904; BF904R S 12 ANGLE MAGNITUDE (ratio) (deg) (ratio) 0.000 79.9 0.993 0.001 78.3 0.992 0.003 80.3 0.987 0.004 73.7 0.980 0.005 70.7 ...

Page 11

... OUTLINE VERSION IEC SOT143B scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES JEDEC EIAJ Rev November 2007 Product specification BF904; BF904R detail 2.5 0.45 0.55 0.2 0.1 0.1 2.1 0.15 0.45 EUROPEAN PROJECTION SOT143B ISSUE DATE 97-02- ...

Page 12

... OUTLINE VERSION IEC SOT143R scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES JEDEC EIAJ Rev November 2007 Product specification BF904; BF904R detail 2.5 0.55 0.45 0.2 0.1 0.1 2.1 0.25 0.25 EUROPEAN PROJECTION SOT143R ISSUE DATE 97-03- ...

Page 13

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev November 2007 BF904; BF904R N-channel dual gate MOS-FETs ...

Page 14

... NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BF904; BF904R N-channel dual gate MOS-FETs Supersedes BF904_904R_5 BF904R_4 BF904R_3 BF904R_2 BF904R_1 - All rights reserved. Date of release: 13 November 2007 Document identifier: BF904_904R_N_6 ...

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