BF904WR NXP Semiconductors, BF904WR Datasheet - Page 2

• Manufacturer Part Number: BF904WR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

Specifications of BF904WR

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 7V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1/1.5@5V@Gate 2pF
• Output Capacitance (typ)@vds: 1.3@5VpF
• Reverse Capacitance (typ): 0.025@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 280mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
FEATURES
 Specially designed for use at 5 V supply voltage
 Short channel transistor with high forward transfer
 Low noise gain controlled amplifier up to 1 GHz
 Superior cross-modulation performance during AGC.
APPLICATIONS
 VHF and UHF applications with 3 to 7 V supply voltage
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT343R package. The transistor
consists of an amplifier MOS-FET with source and
substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
QUICK REFERENCE DATA
2010 Sep 15
V
I
P
T
y
C
C
F
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
D
admittance to input capacitance ratio
such as television tuners and professional
communications equipment.
j
DS
tot
N-channel dual-gate MOS-FET
ig1-s
rs
SYMBOL
fs

drain-source voltage
drain current
total power dissipation
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
CAUTION
PARAMETER
2
PINNING
handbook, halfpage
f = 1 MHz
f = 800 MHz
CONDITIONS
Marking code: MC*
PIN
Fig.1 Simplified outline (SOT343R) and symbol.
1
2
3
4
Top view
3
2
SYMBOL
1
s, b
g
g
4
d
2
1




22



MIN.
source
drain
gate 2
gate 1
MAM192
25




2.2
25
2
g 2
g
TYP.
* = - : made in Hong Kong
* = p : made in Hong Kong
* = t : made in Malaysia
1
DESCRIPTION
Product specification
d
7
30
280
150
30
2.6
35

BF904WR
MAX.
s,b
V
mA
mW
C
mS
pF
fF
dB
UNIT