M29F010B70N6 Micron Technology Inc, M29F010B70N6 Datasheet
M29F010B70N6
Specifications of M29F010B70N6
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M29F010B70N6 Summary of contents
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... Mbit (128Kb x8, uniform block) single supply Flash memory Feature summary Single 5V±10% supply voltage for Program, Erase and Read operations Access time Programming time – 8 µs per byte typical 8 uniform 16 Kbytes memory blocks Program/Erase controller – Embedded byte Program algorithm – Embedded multi-block/Chip Erase algorithm – ...
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Contents Contents 1 Summary description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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M29F010B 5 Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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List of tables List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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M29F010B List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Summary description 1 Summary description The M29F010B Mbit (128Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read ...
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M29F010B Figure 1. Logic diagram Table 1. Signal names A0-A16 DQ0-DQ7 NCI A0-A16 W M29F010B Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Supply ...
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Summary description Figure 2. PLCC connections Figure 3. TSOP connections 8/ M29F010B DQ0 17 A11 A13 A14 M29F010B ...
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M29F010B M Table 2. Uniform block addresses # Size (Kbytes Summary description Address range 1C000h-1FFFFh 18000h-1BFFFh 14000h-17FFFh 10000h-13FFFh 0C000h-0FFFFh 08000h-0BFFFh 04000h-07FFFh 00000h-03FFFh 9/35 ...
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Signal descriptions 2 Signal descriptions See Figure 1: Logic diagram connected to this device. 2.1 Address Inputs (A0-A16) The Address Inputs select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control ...
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M29F010B 2.7 Vss Ground The V Ground is the reference for all voltage measurements Bus operations There are five standard bus operations that control the device. These are Bus Read, Bus Write, Output Disable, Standby and Automatic Standby. ...
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... Block Protection and Blocks Unprotection operations must only be performed on programming equipment. For further information refer to Application Note AN1122, Applying Protection and Unprotection to M29 Series Flash memory. 12/35 , the Data Inputs/Outputs pins are placed in the high- ...
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M29F010B Table 3. Bus operations Operation Bus Read Bus Write Output Disable Standby Read Manufacturer code Read Device code ( Address Inputs Cell address IL ...
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Command interface 4 Command interface All Bus Write operations to the memory are interpreted by the Command Interface. Commands consist of one or more sequential Bus Write operations. Failure to observe a valid sequence of Bus Write operations will result ...
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M29F010B 4.3 Program command The Program command can be used to program a value to one address in the memory array at a time. The command requires four Bus Write operations, the final write operation latches the address and data ...
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Command interface 4.7 Chip Erase command The Chip Erase command can be used to erase the entire chip. Six Bus Write operations are required to issue the Chip Erase Command and start the Program/Erase Controller. If any blocks are protected ...
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M29F010B 4.9 Erase Suspend command The Erase Suspend Command may be used to temporarily suspend a Block Erase operation and return the memory to Read mode. The command requires one Bus Write operation. The Program/Erase Controller will suspend within 15µs ...
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Command interface Table 4. Commands Command 1 (2) Read/Reset 3 (3) Auto Select 3 (4) Program 4 Unlock 3 (5) Bypass Unlock Bypass 2 (4) Program Unlock Bypass 2 (6) Reset (4) Chip Erase 6 6 (4) Block Erase + ...
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M29F010B ) Table 5. Program Erase times and Program Erase Endurance cycles Parameter Chip Erase (all bits in the memory set to ‘0’) Chip Erase Block Erase (16 Kbytes) Program Chip Program Program/Erase cycles (per block ...
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Status Register 5 Status Register Bus Read operations from any address always read the Status Register during Program and Erase operations also read during Erase Suspend when an address within a block being erased is accessed. The bits ...
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M29F010B 5.3 Error bit (DQ5) The Error bit can be used to identify errors detected by the Program/Erase Controller. The Error bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to write the correct ...
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Status Register Table 6. Status Register bits Operation Program Program during Erase Suspend Program Error Chip Erase Block Erase before timeout Block Erase Erase Suspend Erase Error 1. Unspecified data bits should be ignored. Figure 4. Data Polling flowchart 22/35 ...
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M29F010B Figure 5. Data Toggle flowchart START READ DQ5 & DQ6 READ DQ6 DQ6 NO = TOGGLE YES NO DQ5 = 1 YES READ DQ6 TWICE DQ6 NO = TOGGLE YES FAIL PASS AI01370B Status Register 23/35 ...
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Maximum rating 6 Maximum rating Except for the rating "Operating Temperature Range", stresses above those listed in Table 7: Absolute maximum ratings stress ratings only and operation of the device at these or any other conditions above those indicated in ...
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M29F010B 7 DC and AC parameters This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the ...
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DC and AC parameters Figure 7. AC testing load circuit Table 9. Capacitance Symbol C Input capacitance IN C Output capacitance OUT ° MHz Sampled only, not 100% tested. 26/35 1.3V ...
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M29F010B Table 10. DC characteristics Symbol I Input Leakage current LI I Output Leakage current LO I Supply current (Read) CC1 I Supply current (Standby) TTL CC2 I Supply current (Standby) CMOS CC3 (3) I Supply current (Program/Erase) CC4 V ...
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DC and AC parameters Table 11. Read AC characteristics Symbol Alt t t AVAV AVQV ACC ( ELQX ELQV CE ( GLQX OLZ t t GLQV OE ( ...
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M29F010B Table 12. Write AC characteristics, Write Enable controlled Symbol Alt t t AVAV ELWL WLWH DVWH WHDX WHEH WHWL WPH t ...
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DC and AC parameters Table 13. Write AC characteristics, Chip Enable controlled Symbol Alt t t AVAV WLEL ELEH DVEH EHDX EHWH ...
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M29F010B 8 Package mechanical Figure 11. PLCC32 – 32 lead Plastic Leaded Chip Carrier, package outline E3 1. Drawing is not to scale. Table 14. PLCC32 – 32 lead Plastic Leaded Chip Carrier, package mechanical data Symbol ...
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Package mechanical Figure 12. TSOP32 – 32 lead Plastic Thin Small Outline 20mm, package outline Note: Drawing is not to scale. Table 15. TSOP32 – 32 lead Plastic Thin Small Outline 20mm, package mechanical data Symbol ...
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M29F010B 9 Part numbering Table 16. Ordering information scheme Example: Device type M29 Operating voltage ± 10% CC Device function 010B = 1 Mbit (128Kb x8), uniform block Speed ...
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Revision history 10 Revision history Table 17. Revision history Date Revision July 1999 28-Jul-2000 22-Apr-2002 19-Sep-2005 06-Nov-2006 34/35 -01 First Issue New document template Document type: from Preliminary Data to Data Sheet Status Register bit DQ5 clarification -02 Data Polling ...
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M29F010B Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at ...