BUK7608-55 NXP Semiconductors, BUK7608-55 Datasheet - Page 6

• Manufacturer Part Number: BUK7608-55
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of BUK7608-55

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.008Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±16V
• Continuous Drain Current: 75A
• Power Dissipation: 187W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
April 1998
TrenchMOS
Standard level FET
VGS
0
Fig.17. Switching test circuit.
RG
transistor
RD
VDS
T.U.T.
-
+
VDD
6
Product specification
BUK7608-55
Rev 1.000