BUK7608-55 NXP Semiconductors, BUK7608-55 Datasheet - Page 4

• Manufacturer Part Number: BUK7608-55
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of BUK7608-55

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.008Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±16V
• Continuous Drain Current: 75A
• Power Dissipation: 187W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
April 1998
TrenchMOS
Standard level FET
15
10
Fig.5. Typical output characteristics, T
5
0
ID/A
I
ID/A
D
100
Fig.6. Typical on-state resistance, T
100
0
RDS(ON)/mOhm
80
60
40
20
80
60
40
20
= f(V
0
VGS/V=
0
0
0
16
Fig.7. Typical transfer characteristics.
GS
20
) ; conditions: V
6.5
R
1
10
I
DS(ON)
D
2
= f(V
40
2
= f(I
transistor
DS
); parameter V
5.5
4
D
); parameter V
3
ID/A
VGS/V
60
VDS/V
Tj/C = 175
DS
= 25 V; parameter T
4
6
80
VGS/V =
6
5
GS
GS
25
8
j
100
j
= 25 ˚C .
= 25 ˚C .
6
BUK7508-55
6.5
10
6.0
5.5
5.0
4.5
4.0
7
8
10
120
7
j
4
Fig.9. Normalised drain-source on-state resistance.
gfs/S
a = R
V
70
60
50
40
30
20
10
Fig.8. Typical transconductance, T
2.5
1.5
0.5
0
-100
5
4
3
2
1
0
GS(TO)
-100
0
2
1
VGS(TO) / V
a
DS(ON)
max.
min.
typ.
g
Fig.10. Gate threshold voltage.
= f(T
fs
-50
-50
/R
= f(I
20
DS(ON)25 ˚C
j
); conditions: I
BUK959-60
D
); conditions: V
0
0
Tmb / degC
40
Tj / C
= f(T
50
50
ID/A
Rds(on) normlised to 25degC
j
); I
D
= 1 mA; V
D
60
100
100
= 25 A; V
DS
Product specification
= 25 V
BUK7608-55
150
BUK759-60
150
j
80
= 25 ˚C .
DS
GS
= V
Rev 1.000
= 5 V
200
200
GS
100