LH28F160BVHE-BTL90 Sharp Electronics, LH28F160BVHE-BTL90 Datasheet - Page 13

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LH28F160BVHE-BTL90

Manufacturer Part Number
LH28F160BVHE-BTL90
Description
Manufacturer
Sharp Electronics
Datasheet

Specifications of LH28F160BVHE-BTL90

Cell Type
NOR
Density
16Mb
Access Time (max)
90ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
21/20Bit
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
2M/1M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant

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4. Following the Read Identifier Codes command, read operations access manufacturer and device codes. See Section 4.2 for
6. Either 40H or 10H are recognized by the WSM as the word/byte write setup.
7. Commands other than those shown above are reserved by SHARP for future device implementations and should not be
NOTES:
2. X=Any valid address within the device.
3. SRD=Data read from status register. See Table 7 for a description of the status register bits.
5. If the block is boot block, WP# must be at V,
1. BUS operations are defined in Table 3.1 and Table 3.2.
SHARP
read identifier code data.
used.
IA=Identifier Code Address: see Figure 4. A-, set to V, or V,, in Byte Mode (BYTE#=V,).
BA=Address within the block being erased. The each block can select by the address pin Al9 through A,, combination.
WA=Address of memory location to be written.
WD=Data to be written at location WA. Data is latched on the rising edge of WE# or CE# (whichever goes high first).
ID=Data read from identifier codes.
operations. Attempts to issue a block erase or word/byte write to a boot block while WP# is V,, or RP# is V,,
Table 4. Command Definitions(7)
or RP# must be at V,
LHF16Vll
to enable block erase or word/byte write
Rev. 1.02
11

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