LH28F160BVHE-BTL90 Sharp Electronics, LH28F160BVHE-BTL90 Datasheet - Page 12

• Manufacturer Part Number: LH28F160BVHE-BTL90
• Manufacturer: Sharp Electronics

Specifications of LH28F160BVHE-BTL90

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

,.
,
NOTES:
4.
5.
6.
7.
9.
2. X can be V, or VI, for control pins and addresses, and VppL, or VppHr/2 for V,.
3. RY/BY# is V,, when the WSM is executing internal block erase or word/byte write algorithms. It is High Z during when
8. Never hold OE# low and WE# low at the same timing.
10. w#
1. Refer to DC Characteristics. When VppIVppLK, memory contents can be read, but not altered.
Read Identifier Codes
Read
Output Disable
Standby
Deep Power-Down
Read Identifier Codes
Write
Read
Output Disable
Standby
Deep Power-Down
Write
vppHli2 voltages.
the WSM is not busy, in block erase suspend mode (with word/byte write inactive), word/byte write suspend mode or
deep power-down
RP# at GNDk0.2V ensures the lowest deep power-down current.
See Section 4.2 for read identifier code data.
Command writes involving block erase or word/byte write are reliably executed when Vpp=VppBln and V,,=2.7V-3.6V.
Block erase or word/byte write with VtB<RP#<VHH p reduce spurious results and should not be attempted.
Refer to Table 4 for valid D,, during a write operation.
A-, set to V, or V,, in byte mode (BYTE#=V,,).
set to vL or VI,. ,
Mode
Mode
mode.
Notes
Notes
6,7,8
67 8
4,lO
4,lO
83
7 9
10
10
8
8
8
VIHor
v*Hor
vIH
vIH
VIH
‘+H Or
‘1,
‘I,
vIH
$Ior
VHH
VI-II-I
VHH
VI-II-I
vHH
RP#
v,
VI-II-I
‘HH
RP#
Table 3.1. Bus Operations(BYTE#=V,,)(‘,*)
v,
Table 3.2. Bus Operations(BYTE#=V&*,*)
HH
HH
Or
Or
Or
Or
Or
Or
CE#
v,
VIL
VI,
VIL
VIL
x
CE#
VI,
v,
VIL
V,
VIL
X
LHF16Vll
OE#
v,
‘1,
VI,
‘1,
X
X
OE#
VI,
VI,
V,
VI,
X
X
WE#
VI,
VI,
VI,
‘IL
X
X
WE#
VI,
VI,
VI,
VIL
X
X
Figure 4
Address
See
X
X
X
X
X
Figure 4
Address
See
X
X
X
X
X
VP,
See DC Characteristics for VP,,,
X
X
X
X
X
X
VP,
X
X
X
X
X
X
High Z
High Z
High Z
Note 5
DQ,,
DoUT
DIN
DQ0-,5
High Z
High Z
High Z
Note 5
DOUT
DQs-,5
High Z
High Z
High Z
High Z
High Z
DIN
X
RY/BY#c3)
RY/BY#(3)
High Z
High Z
High Z
High Z
Rev. 1.02
X
X
X
X
X
X
X
X
and