LH28F800SUT-70 Sharp Electronics, LH28F800SUT-70 Datasheet - Page 7

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LH28F800SUT-70

Manufacturer Part Number
LH28F800SUT-70
Description
Manufacturer
Sharp Electronics
Datasheet

Specifications of LH28F800SUT-70

Cell Type
NOR
Density
8Mb
Interface Type
Parallel
Boot Type
Not Required
Address Bus
20/19Bit
Operating Supply Voltage (typ)
3.3/5V
Operating Temp Range
0C to 70C
Package Type
TSOP-I
Program/erase Volt (typ)
4.5 to 5.5V
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
3/4.5V
Operating Supply Voltage (max)
3.6/5.5V
Word Size
8/16Bit
Number Of Words
1M/512K
Supply Current
35mA
Mounting
Surface Mount
Pin Count
56
Lead Free Status / Rohs Status
Not Compliant

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8M (512K × 16, 1M × 8) Flash Memory
Saving (APS) feature which substantially reduces the
active current when the device is in static mode of
operation (addresses not switching).
(1 mA at 3.3 V).
when the RP
transitions low, any current operation is aborted and the
device is put into the deep power-down mode. This mode
brings the device power consumption to less than 5 µA,
typically, and provides additional write protection by
acting as a device reset pin during power transitions.
When the power is turned on, RP
der to return the device to default configuration. When
the 3/5
occurred, or at the power on/off, RP
low in order to protect data from noise. A recovery time
of 400 ns (V
switching high until outputs are again valid. In the Deep
Power-Down state, the WSM is reset (any current
operation will abort) and the CSR, GSR and BSR regis-
ters are cleared.
either CE
high with all input control pins at CMOS levels. In this
mode, the device typically draws an I
rent of 10 µA.
The LH28F800SU incorporates an Automatic Power
In APS mode, the typical I
A Deep Power-Down mode of operation is invoked
A CMOS Standby mode of operation is enabled when
    »
pin is switched, or when the power transition is
    »
0
or CE
CC
    »
(called PWD on the LH28F008SA) pin
= 5.0 V ± 0.5 V) is required from RP
    »
1
transitions high and RP
CC
current is 2 mA at 5.0 V
    »
pin turned to low or-
    »
is required to stay
CC
standby cur-
    »
stays
    »
MEMORY MAP
EFFFFH
DFFFFH
CFFFFH
BFFFFH
AFFFFH
FFFFFH
D0000H
C0000H
9FFFFH
8FFFFH
7FFFFH
6FFFFH
5FFFFH
4FFFFH
3FFFFH
2FFFFH
1FFFFH
0FFFFH
E0000H
B0000H
A0000H
F0000H
90000H
80000H
70000H
60000H
50000H
40000H
30000H
20000H
10000H
00000H
Figure 4. LH28F800SU Memory Map
(Byte-Wide Mode)
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
64KB BLOCK
LH28F800SU
15
14
13
12
11
10
28F800SUR-3
9
8
7
6
5
4
3
2
1
0
7

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