LH28F800SUT-70 Sharp Electronics, LH28F800SUT-70 Datasheet - Page 30

• Manufacturer Part Number: LH28F800SUT-70
• Manufacturer: Sharp Electronics

Specifications of LH28F800SUT-70

• Cell Type: NOR
• Density: 8Mb
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 20/19Bit
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Program/erase Volt (typ): 4.5 to 5.5V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 3/4.5V
• Operating Supply Voltage (max): 3.6/5.5V
• Word Size: 8/16Bit
• Number Of Words: 1M/512K
• Supply Current: 35mA
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / Rohs Status: Not Compliant

LH28F800SU
AC Characteristics for WE
NOTES:
CE
1. Read timing during write and erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, but not 100% tested.
4. Write/Erase durations are measured to valid Status Register (CSR) Data.
5. Word/Byte write operations are typically performed with 1 Programming Pulse.
6. Address and Data are latched on the rising edge of CE
30
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
»
T
t
t
WHQV
WHQV
t
t
t
t
t
WLWH
WHWL
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
GHWL
WHRL
WHGL
PHWL
is defined as the latter of CE
AVAV
PHEL
ELWL
RHPL
QVVL
A
= 0°C to +70°C
1
2
Write Cycle Time
V
RP
CE
Address Setup to WE Going High
Data Setup to WE Going High
WE Pulse Width
Data Hold from WE High
Address Hold from WE High
CE
WE Pulse Width High
Read Recovery before Write
WE High to RY
RP
(CSR, GSR, BSR) Data and RY
RP
Write Recovery before Read
V
GSR, BSR) Data and RY
Duration of Word/Byte Write Operation
Duration of Block Erase Operation
PP
PP
»
»
»
»
»
Setup to CE
Setup to WE Going Low
Hold from WE High
Hold from Valid Status Register
High Recovery to WE Going Low
Hold from Valid Status Register (CSR,
Setup to WE Going High
PARAMETER
»
/ BY
»
0
»
Going Low
or CE
»
Going Low
»
»
1
- Controlled Command Write Operations
going Low or the first of CE
»
/ BY
»
High
»
/ BY
»
High
»
for all Command Write Operations.
TYP.
V
CC
8
»
0
or CE
= 5.0 ± 0.25 V
MIN.
100
480
0.3
4.5
70
50
50
40
10
10
30
60
0
0
0
0
0
1
»
1
going High.
MAX.
100
8M (512K × 16, 1M × 8) Flash Memory
TYP.
V
8
CC
= 5.0 ± 0.5 V
MIN.
100
480
0.3
4.5
80
50
50
50
10
10
30
65
0
0
0
0
1
0
1
(Continued)
MAX.
100
UNITS
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
µs
s
NOTE
2, 6
2, 6
4, 5
3
2
2
3
4