SJEP120R063A SEMISOUTH, SJEP120R063A Datasheet - Page 5

• Manufacturer Part Number: SJEP120R063A
• Description: 58T5149
• Manufacturer: SEMISOUTH

Specifications of SJEP120R063A

• Rohs Compliant: YES
• Transistor Type: JFET
• Gate-source Cutoff Voltage Vgs(off) Max: 15V
• Power Dissipation Pd: 250W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-247
• No. Of Pins: 3

SJEP120R063A Rev1.1
The SGDR600P1 is a gate driver reference design available for purchase from SemiSouth. See applications note AN-SS3 for full circuit
description, test results, schematics, and bill of materials. Gerber files also available upon request.
E
s
700
600
500
400
300
200
100
= f(I
Figure 13. Switching Energy Losses
0
D
0
); V
Tj = 25
Tj = 150
DS
= 600V; GD = +15V/-10V, R
6
o
C
o
C
I
D
, Drain Current (A)
12
SGDR600P1
18
Figure 15. Gate Driver & Gate Waveforms
Figure 16. Test Circuit & Test Conditions
24
GEXT
= 2.5ohm
30
E
E
E
TS
OFF
ON
36
PRELIMINARY
5/7
1000
900
800
700
600
500
400
300
200
100
E
0
Test Conditions
s
Figure 14. Switching Energy Losses
= f(R
0
Tj = 25
Tj = 150
Phase-leg configuration
V
RC snubber: R= 22 and C = 4.7nF
400uH load inductance
Each device driven by separate SGD600P1
Gate driver approx. 5mm from gate terminal
3.3nF gate-source capacitive clamp
DD
GEXT
RgEXT, External Gate Resistance, ( )
= 600V, I
o
); V
C
o
C
DS
3
= 600V; I
LPK
SJEP120R063A
= 25A, T
Silicon Carbide
D
6
= 24A, GD = +15V/-10V
A
= 25
9
o
C
June 2011
E
E
E
OFF
ON
TS
12