SJEP120R063A SEMISOUTH, SJEP120R063A Datasheet

58T5149

SJEP120R063A

Manufacturer Part Number
SJEP120R063A
Description
58T5149
Manufacturer
SEMISOUTH
Datasheet

Specifications of SJEP120R063A

Rohs Compliant
YES
Transistor Type
JFET
Gate-source Cutoff Voltage Vgs(off) Max
15V
Power Dissipation Pd
250W
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
TO-247
No. Of Pins
3
Continuous Drain Current
Pulsed Drain Current
Short Circuit Withstand Time
Power Dissipation
Gate-Source Voltage
Operating and Storage Temperature
Lead Temperature for Soldering
(1)
(2)
Thermal Resistance, junction-to-case
Thermal Resistance, junction-to-ambient
Features:
- Compatible with Standard Gate Driver ICs
- Positive Temperature Coefficient for Ease of Paralleling
- Temperature Independent Switching Behavior
- 150 ° C Maximum Operating Temperature
- R
- Voltage Controlled
- Low Gate Charge
- Low Intrinsic Capacitance
Applications:
High Performance Audio
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Normally-OFF Trench Silicon Carbide Power JFET
Limited by pulse width
Rg
SJEP120R063A Rev1.1
DS(on)max
EXT
= 1 ohm, t
Parameter
of 0.063
p
< 200ns, see Figure 5 for static conditions
(1)
Parameter
Symbol
I
I
T
D, Tj=125
D, Tj=150
j
T
V
, T
I
t
P
DM
SC
sold
GS
D
j,stg
V
DD
1/8" from case < 10 s
PRELIMINARY
< 800 V, T
TO-247
Conditions
4
1/7
T
T
T
T
Symbol
j
j
C
C
= 125 ° C
= 150 ° C
static
R
R
AC
= 25 ° C
= 25 ° C
th,JC
th,JA
(2)
C
< 125 ° C
1
Typ
2
-
-
R
3
DS(ON)max
E
BV
TS,typ
Value
DS
Product Summary
SJEP120R063A
-55 to +150
G(1)
G(1)
-10 to +15
-10 to +3
Silicon Carbide
Value
250
260
Internal Schematic
30
20
60
50
Max
0.063
0.6
50
1200
440
D(2,4)
D(2,4)
S(3)
S(3)
June 2011
° C / W
Unit
µJ
V
Unit
µs
° C
° C
W
A
A
V
V

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SJEP120R063A Summary of contents

Page 1

... Operating and Storage Temperature Lead Temperature for Soldering (1) Limited by pulse width ( ohm, t < 200ns, see Figure 5 for static conditions EXT p THERMAL CHARACTERISTICS Parameter Thermal Resistance, junction-to-case Thermal Resistance, junction-to-ambient SJEP120R063A Rev1.1 PRELIMINARY 4 TO-247 Symbol Conditions 125 ° Tj=125 150 ° Tj=150 ...

Page 2

... Turn-off Delay Fall Time Turn-on Energy Turn-off Energy Total Switching Energy Turn-on Delay Rise Time Turn-off Delay Fall Time Turn-on Energy Turn-off Energy Total Switching Energy Total Gate Charge Gate-Source Charge Gate-Drain Charge SJEP120R063A Rev1.1 PRELIMINARY Symbol Conditions 1200 µ 1200 ...

Page 3

... V , Drain-Source Voltage (V) DS Figure 5. Typical Gate-Source Current I = f(V ); parameter 10.00 1.00 0.10 0.01 2.0 2 Gate-Source Voltage (V) GS SJEP120R063A Rev1.1 PRELIMINARY Figure 2. Typical Output Characteristics Figure 4. Typical Transfer Characteristics GS 3.0 V 2.5 V 2 Figure 6. Typical Drain-Source On-resistance j 0.35 0.30 150 ...

Page 4

... Drain-Source Voltage (V) DS Figure 11. Gate Threshold Voltage 1.50 Max 1.25 Typical 1.00 0.75 0. 100 T , Junction Temperature ( j SJEP120R063A Rev1.1 PRELIMINARY Figure 8. Typical Drain-Source On-resistance GS 0.052 0.051 0.050 50 mA 0.049 0.048 200 mA 0.047 0.046 0.045 0.044 0.043 0.042 125 150 175 C iss ...

Page 5

... Drain Current (A) D SGDR600P1 The SGDR600P1 is a gate driver reference design available for purchase from SemiSouth. See applications note AN-SS3 for full circuit description, test results, schematics, and bill of materials. Gerber files also available upon request. SJEP120R063A Rev1.1 PRELIMINARY = 2.5ohm GEXT 1000 ...

Page 6

... SJEP120R063A Rev1.1 PRELIMINARY MILLIMETERS DIM MIN MAX A 4.903 5.157 A1 2.273 2.527 A2 1.853 2.108 b 1.073 1.327 b1 2.873 3.381 b2 1.903 2.386 c 0.600 0.752 D 20.823 21.077 D1 17.393 17.647 D2 1.063 1.317 e 5.450 E 15.773 16.027 E1 13.893 14.147 L 20.053 20.307 L1 4.168 4.472 Q 6.043 6.297 ØP 3.560 3.660 Ø ...

Page 7

... Unless expressly approved in writing by an authorized representative of SemiSouth, SemiSouth products are not designed, authorized or warranted for use in military, aircraft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or property or environmental damage. SJEP120R063A Rev1.1 PRELIMINARY 7/7 Silicon Carbide ...

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