SJEP120R063A SEMISOUTH, SJEP120R063A Datasheet - Page 3

• Manufacturer Part Number: SJEP120R063A
• Description: 58T5149
• Manufacturer: SEMISOUTH

Specifications of SJEP120R063A

• Rohs Compliant: YES
• Transistor Type: JFET
• Gate-source Cutoff Voltage Vgs(off) Max: 15V
• Power Dissipation Pd: 250W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-247
• No. Of Pins: 3

SJEP120R063A Rev1.1
10.00
1.00
0.10
0.01
Figure 1. Typical Output Characteristics
Figure 3. Typical Output Characteristics
80
70
60
50
40
30
20
10
24
21
18
15
12
Figure 5. Typical Gate-Source Current
0
9
6
3
0
0
2.0
0
I
I
D
D
= f(V
= f(V
1
V
V
I
GS
DS
DS
GS
DS
VDS, Drain-Source Voltage (V)
, Gate-Source Voltage (V)
); T
, Drain-Source Voltage (V)
); T
= f(V
j
2.5
j
2
2
= 150 ° C; parameter: V
= 25 ° C; parameter: V
GS
); parameter: T
3
3.0
4
4
j
150
25
GS
GS
o
o
C
5
C
2.5 V
1.5 V
2.0 V
1.5 V
2.5 V
3.0 V
3.0 V
2.0 V
3.5
6
6
PRELIMINARY
3/7
Figure 6. Typical Drain-Source On-resistance
Figure 4. Typical Transfer Characteristics
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
Figure 2. Typical Output Characteristics
40
35
30
25
20
15
10
60
50
40
30
20
10
5
0
0
0.00
0
0
I
R
D
DS(on)
= f(V
0.50
V
V
GS
DS
= f(I
DS
10
I
, Gate-Source Voltage (V)
); T
D
, Drain-Source Voltage (V)
= f(V
D
1.00
I
); V
j
D
= 125 ° C; parameter: V
2
SJEP120R063A
, Drain Current (A)
GS
GS
Silicon Carbide
); V
= 3.0; parameter: Tj
1.50
20
DS
150
= 5 V
2.00
o
C
4
30
2.50
June 2011
GS
125
25
2.0 V
2.5 V
o
3.0 V
1.5 V
o
C
C
3.00
40
6