SJEP120R063A SEMISOUTH, SJEP120R063A Datasheet - Page 2

• Manufacturer Part Number: SJEP120R063A
• Description: 58T5149
• Manufacturer: SEMISOUTH

Specifications of SJEP120R063A

• Rohs Compliant: YES
• Transistor Type: JFET
• Gate-source Cutoff Voltage Vgs(off) Max: 15V
• Power Dissipation Pd: 250W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-247
• No. Of Pins: 3

Drain-Source Blocking Voltage
Total Drain Leakage Current
Total Gate Reverse Leakage
Drain-Source On-resistance
Gate Threshold Voltage
Gate Forward Current
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance,
energy related
Turn-on Delay
Rise Time
Turn-off Delay
Fall Time
Turn-on Energy
Turn-off Energy
Total Switching Energy
Turn-on Delay
Rise Time
Turn-off Delay
Fall Time
Turn-on Energy
Turn-off Energy
Total Switching Energy
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ELECTRICAL CHARACTERISTICS
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
SJEP120R063A Rev1.1
Parameter
Symbol
R
R
V
BV
I
C
GFWD
C
I
I
C
C
Q
DS(on)
E
E
E
E
Q
GS(th)
R
G(ON)
GSS
E
E
Q
DSS
t
t
t
t
o(er)
on
t
off
t
on
t
off
t
oss
iss
rss
on
off
on
off
r
r
gd
f
ts
f
ts
gs
G
DS
g
V
V
See Figure 15 and application note for
See Figure 15 and application note for
DS
DS
f = 1 MHz, drain-source shorted
= 1200 V, V
V
V
= 1200 V, V
V
gate drive recommendations
gate drive recommendations
DS
DS
Gate Driver = SGDR600P1,
Gate Driver = SGDR600P1,
V
Inductive Load, T
V
GS
V
V
Inductive Load, T
GD Voltages: +15V, -10V
GD Voltages: +15V, -10V
V
GS
GS
I
I
V
V
DS
GS
D
D
V
= 1200 V, V
= 1200 V, V
DS
= -10 V, VDS = 1200V
DS
DS
DS
= 20 A, V
= 20 A, V
>2.7V; See Figure 5
= 0 V, I
PRELIMINARY
= 600 V, I
= -10 V, VDS = 0V
V
Conditions
= 1 V, I
= 600 V, I
= 600 V, I
V
T
= 0 V to 600 V,
Tj = 150
GS
T
V
Tj = 25
V
DD
j
2/7
j
= 125 ° C
GS
GS
= 25 ° C
= + 2.5 V
GS
= 100 V
GS
= 0 V
= 3 V
D
D
= 0 V, Tj = 150
= 1200 µA
= 0 V, Tj = 25
GS
GS
o
D
D
GS
GS
= 70 mA
D
o
C
J
C
= 24 A,
= 24 A,
J
= 3 V,
= 3 V,
= 10 A,
= 150
< -10 V,
< -10 V,
= 25
o
o
C
C
o
o
C
C
1200
0.75
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SJEP120R063A
Silicon Carbide
Value
1220
Typ
0.05
0.13
1.00
0.25
-0.2
-0.2
200
600
440
180
169
100
131
222
353
145
229
374
20
15
12
35
30
15
15
35
30
60
49
2
4
2
-
0.063
Max
1200
1.25
-0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
June 2011
Unit
mA
mA
nC
µA
pF
ns
uJ
ns
uJ
V
V