SJEP120R063A SEMISOUTH, SJEP120R063A Datasheet - Page 4

• Manufacturer Part Number: SJEP120R063A
• Description: 58T5149
• Manufacturer: SEMISOUTH

Specifications of SJEP120R063A

• Rohs Compliant: YES
• Transistor Type: JFET
• Gate-source Cutoff Voltage Vgs(off) Max: 15V
• Power Dissipation Pd: 250W
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-247
• No. Of Pins: 3

SJEP120R063A Rev1.1
Figure 7. Typical Drain-Source On-resistance
1.E+04
1.E+03
1.E+02
1.E+01
1.50
1.25
1.00
0.75
0.50
0.16
0.14
0.12
0.10
0.08
0.06
0.04
Figure 11. Gate Threshold Voltage
Figure 9. Typical Capacitance
0
0
0
C = f(V
T
R
T
j
DS(ON)
, Junction Temperature (
25
j
V
, Junction Temperature (°C)
DS
Typical
Max
DS
300
, Drain-Source Voltage (V)
50
= f(T
); V
50
V
GS
th
j
); parameter: I
= f(T
= 0 V; f = 1 MHz
75
600
100
j
)
100
50 mA
C
C
rss
iss
GS
125
o
900
150
C)
-1.5mV/
C
200 mA
150
oss
1200
o
175
200
C
PRELIMINARY
4/7
Figure 8. Typical Drain-Source On-resistance
1E-03
1E-04
1E-05
1E-06
1E-07
1E-08
1E-09
Figure 12. Typical Drain-Source Leakage
0.052
0.051
0.050
0.049
0.048
0.047
0.046
0.045
0.044
0.043
0.042
3.0
2.5
2.0
1.5
1.0
0.5
0.0
BV
Q
0.1
0
Figure 10. Typical Gate Charge
0
g
DS
= f(V
, Drain-Source Blocking Voltage (V)
I
D
I
GS
= f(V
, Gate-Source Current (mA)
GS
Q
R
); V
g
300
DS(ON)
, Total Gate Charge (nC)
1.0
DS
15
DS
); V
SJEP120R063A
= 600V; I
= f(I
GS
= 0V; parameter: Tj
Silicon Carbide
GS
10.0
600
); T
30
D
j
= 10A, T
= 25
o
100.0
C
900
45
j
= 25
100
150
June 2011
25
o
C
o
o
1000.0
o
C
C
C
1200
60