M29W640FT70N6E Micron Technology Inc, M29W640FT70N6E Datasheet - Page 7

• Manufacturer Part Number: M29W640FT70N6E
• Manufacturer: Micron Technology Inc

Specifications of M29W640FT70N6E

• Cell Type: NOR
• Density: 64Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 23/22Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 8M/4M
• Supply Current: 10mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

1
Summary description
The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read,
erased and reprogrammed. These operations can be performed using a single low voltage
(2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode.
The memory is divided into blocks that can be erased independently so it is possible to
preserve valid data while old data is erased. Blocks can be protected in units of 256 KByte
(generally groups of four 64 KByte blocks), to prevent accidental Program or Erase
commands from modifying the memory. Program and Erase commands are written to the
Command Interface of the memory. An on-chip Program/Erase Controller simplifies the
process of programming or erasing the memory by taking care of all of the special
operations that are required to update the memory contents. The end of a program or erase
operation can be detected and any error conditions identified. The command set required to
control the memory is consistent with JEDEC standards.
The device features an asymmetrical blocked architecture. The device has an array of 135
blocks:
M29W640FT has the Parameter Blocks at the top of the memory address space while the
M29W640FB locates the Parameter Blocks starting from the bottom.
The M29W640F has an extra block, the Extended Block, of 128 Words in x16 mode or of
256 Byte in x8 mode that can be accessed using a dedicated command. The Extended
Block can be protected and so is useful for storing security information. However the
protection is not reversible, once protected the protection cannot be undone.
Chip Enable, Output Enable and Write Enable signals control the bus operation of the
memory. They allow simple connection to most microprocessors, often without additional
logic.
The V
word/byte programming. If this signal is held at V
parameter block, are protected from program and erase operations.
The device supports Asynchronous Random Read and Page Read from all blocks of the
memory array.
The memories are offered in TSOP48 (12x 20mm) and TFBGA48 (6x8mm, 0.8mm pitch)
packages.
In order to meet environmental requirements, Numonyx offers the M29W640FT and the
M29W640FB in ECOPACK
of second Level Interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an Numonyx trademark.
ECOPACK specifications are available at: www.Numonyx.com.
The memory is delivered with all the bits erased (set to 1).
8 Parameters Blocks of 8 KBytes each (or 4 KWords each)
127 Main Blocks of 64 KBytes each (or 32 KWords each)
PP
/WP signal is used to enable faster programming of the device, enabling multiple
®
packages. ECOPACK packages are Lead-free. The category
SS
, the boot block, and its adjacent
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