M29W640FT70N6E Micron Technology Inc, M29W640FT70N6E Datasheet - Page 29

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M29W640FT70N6E

Manufacturer Part Number
M29W640FT70N6E
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of M29W640FT70N6E

Cell Type
NOR
Density
64Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Top
Address Bus
23/22Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
8M/4M
Supply Current
10mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant

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Table 8.
1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V
4. Maximum value measured at worst case conditions for both temperature and V
Chip Erase
Block Erase (64 KBytes)
Erase Suspend Latency time
Program (Byte or Word)
Double Byte
Double Word /Quadruple Byte Program
Quadruple Word / Octuple Byte Program
Chip Program (Byte by Byte)
Chip Program (Word by Word)
Chip Program (Double Word/Quadruple Byte Program)
Chip Program (Quadruple Word/Octuple Byte Program)
Program Suspend Latency time
Program/Erase Cycles (per Block)
Data Retention
Program, Erase times and Program, Erase Endurance cycles
Parameter
100,000
Min
20
CC
CC
.
after 100,00 program/erase cycles.
Typ
0.8
80
10
10
10
10
80
40
20
10
(1)(2)
Max
400
200
200
200
200
400
200
100
50
50
6
4
(4)
(4)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(2)
cycles
years
Unit
μs
μs
μs
μs
μs
μs
s
s
s
s
s
s
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