BUK9506-55B NXP Semiconductors, BUK9506-55B Datasheet - Page 4

• Manufacturer Part Number: BUK9506-55B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9506-55B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0054 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 146 A
• Power Dissipation: 258 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 106 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 95 ns
• Lead Free Status / Rohs Status: Details
• Other names: BUK9506-55B,127

NXP Semiconductors
BUK9506-55B_4
Product data sheet
Fig 3.
I
(A)
10
D
10
10
3
2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
Limit R
Capped at 75 A due to package
1
DSon
= V
Rev. 04 — 23 July 2009
DS
/ I
D
DC
10
BUK9506-55B
N-channel TrenchMOS FET
V
DS
(V)
© NXP B.V. 2009. All rights reserved.
t
p
= 10 μ s
100 μ s
1 ms
10 ms
100 ms
03nh83
10
2
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