BUK9506-40B NXP Semiconductors, BUK9506-40B Datasheet
BUK9506-40B
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BUK9506-40B Summary of contents
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... BUK9506-40B N-channel TrenchMOS logic level FET Rev. 02 — 25 January 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 January 2011 BUK9506-40B N-channel TrenchMOS logic level FET Graphic symbol mbb076 Version SOT78A © NXP B.V. 2011. All rights reserved. ...
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... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 January 2011 BUK9506-40B N-channel TrenchMOS logic level FET Min - - -15 [1] Figure 1; - [2] - [2] Figure 1 - Figure -55 -55 ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK9506-40B Product data sheet Limit DSon DS D Capped due to package 1 All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 January 2011 BUK9506-40B N-channel TrenchMOS logic level FET 03nm21 = 10 μ 100 μ 100 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9506-40B Product data sheet Conditions see Figure 4 verical in still air −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 January 2011 BUK9506-40B N-channel TrenchMOS logic level FET Min Typ - - - 60 03nm22 t p δ ...
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... ° ° see Figure /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 January 2011 BUK9506-40B N-channel TrenchMOS logic level FET Min Typ Max = 25 ° -55 ° 1.1 1 2 500 ...
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... R (mΩ (V) DS Fig 6. 03ng53 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 January 2011 BUK9506-40B N-channel TrenchMOS logic level FET 12 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values 140 g fs (S) 105 70 35 ...
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... Fig 12. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 January 2011 BUK9506-40B N-channel TrenchMOS logic level FET max typ min 0 60 120 Label 3.2 3.4 3.6 3 ...
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... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.0 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 January 2011 BUK9506-40B N-channel TrenchMOS logic level FET 7000 C C iss (pF) 5250 C oss 3500 C rss 1750 0 −2 −1 ...
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... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 January 2011 BUK9506-40B N-channel TrenchMOS logic level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13 ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK9506-40B separated from data sheet BUK95_9606_40B v.1. BUK95_9606_40B v.1 20030514 BUK9506-40B Product data sheet ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 January 2011 BUK9506-40B N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 25 January 2011 BUK9506-40B N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 25 January 2011 Document identifier: BUK9506-40B ...