BUK9506-55B,127 NXP Semiconductors, BUK9506-55B,127 Datasheet
BUK9506-55B,127
Specifications of BUK9506-55B,127
Related parts for BUK9506-55B,127
BUK9506-55B,127 Summary of contents
Page 1
BUK95/96/9E06-55B N-channel TrenchMOS™ logic level FET Rev. 03 — 30 November 2004 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very low on-state resistance. ...
Page 2
... Philips Semiconductors 3. Ordering information Table 2: Ordering information Type number Package Name BUK9506-55B TO-220AB 2 BUK9606-55B D -PAK 2 BUK9E06-55B I -PAK 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage (DC drain-gate voltage (DC) DGR V gate-source voltage (DC) ...
Page 3
Philips Semiconductors 120 P der (%) 100 P tot P = ---------------------- - 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of mounting base temperature ...
Page 4
Philips Semiconductors 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to mounting base th(j-mb) R thermal resistance from junction to ambient th(j-a) SOT78 (TO-220AB) and SOT226 (I 2 SOT404 (D -PAK) 5.1 Transient thermal ...
Page 5
Philips Semiconductors 6. Characteristics Table 5: Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage GS(th) I drain-source leakage current DSS I gate-source leakage current GSS R ...
Page 6
Philips Semiconductors Table 5: Characteristics unless otherwise specified. j Symbol Parameter Source-drain diode V source-drain (diode forward) voltage reverse recovery time rr Q recovered charge r 350 I 10 4.2 D (A) 4 ...
Page 7
Philips Semiconductors 2.5 V GS(th) (V) max 2.0 typ 1.5 min 1.0 0.5 0 Fig 9. Gate-source threshold voltage as a function of junction temperature. 200 g ...
Page 8
Philips Semiconductors 100 175 Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 100 I S (A) ...
Page 9
Philips Semiconductors 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB D L DIMENSIONS (mm are the original dimensions UNIT 4.5 1.39 0.9 1.3 mm 4.1 1.27 0.6 1.0 Note ...
Page 10
Philips Semiconductors Plastic single-ended surface mounted package ( DIMENSIONS (mm are the original dimensions UNIT c 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 OUTLINE VERSION IEC SOT404 Fig 18. ...
Page 11
Philips Semiconductors Plastic single-ended package (Philips version DIMENSIONS (mm are the original dimensions) UNIT 4.5 1.40 0.85 mm 4.1 1.27 0.60 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION ...
Page 12
Philips Semiconductors 8. Mounting 8.35 8.15 4.85 7.95 solder lands solder resist occupied area solder paste Dimensions in mm. Fig 20. Reflow soldering footprint for SOT404. 9397 750 13519 Product data sheet 10.85 10.60 10.50 1.50 7.50 7.40 2.15 2.25 ...
Page 13
Philips Semiconductors 9. Revision history Table 6: Revision history Document ID BUK95_96_9E06_55B_3 Modifications: BUK95_96_9E06_55B-02 BUK95_96_9E06_55B-01 9397 750 13519 Product data sheet Release Data sheet Change date status notice 20041130 Product data - sheet • The format of this data sheet ...
Page 14
Philips Semiconductors 10. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...
Page 15
Philips Semiconductors 15. Contents 1 Product profi 1.1 General description ...