BUK9506-55B NXP Semiconductors, BUK9506-55B Datasheet - Page 11

• Manufacturer Part Number: BUK9506-55B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9506-55B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0054 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 146 A
• Power Dissipation: 258 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 106 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 95 ns
• Lead Free Status / Rohs Status: Details
• Other names: BUK9506-55B,127

NXP Semiconductors
8. Revision history
Table 7.
BUK9506-55B_4
Product data sheet
Document ID
BUK9506-55B_4
Modifications:
BUK95_96_9E06_55B_3
(9397 750 13519)
BUK95_96_9E06_55B-02
(9397 750 10474)
BUK95_96_9E06_55B-01
(9397 750 09946)
Revision history
Release date
20090723
20041130
20021010
20020813
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK9506-55B separated from data sheet BUK95_96_9E06_55B_3.
Data sheet status
Product data sheet
Product data sheet
Product data
Product data
Rev. 04 — 23 July 2009
Change notice
-
-
-
-
BUK9506-55B
N-channel TrenchMOS FET
Supersedes
BUK95_96_9E06_55B_3
BUK95_96_9E06_55B-02
BUK95_96_9E06_55B-01
-
© NXP B.V. 2009. All rights reserved.
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