PSMN011-30YL,115 NXP Semiconductors, PSMN011-30YL,115 Datasheet - Page 4
![MOSFET Power N-Ch 30V Trench MOS logic level FET](/photos/40/31/403123/lfpak_sml.jpg)
PSMN011-30YL,115
Manufacturer Part Number
PSMN011-30YL,115
Description
MOSFET Power N-Ch 30V Trench MOS logic level FET
Manufacturer
NXP Semiconductors
Specifications of PSMN011-30YL,115
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
10.7 mOhms
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
36 A
Power Dissipation
49 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
LFPAK
Fall Time
5 ns
Gate Charge Qg
7.3 nC
Minimum Operating Temperature
- 55 C
Rise Time
8 ns
Lead Free Status / Rohs Status
Details
Other names
934064949115
NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN011-30YL
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
0.02
Thermal characteristics
0.2
δ = 0.5
0.05
0.1
single shot
Parameter
thermal resistance from junction to
mounting base
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
N-channel 10.7 mΩ 30 V TrenchMOS logic level FET in LFPAK
Rev. 2 — 17 May 2011
Conditions
see
10
-3
Figure 4
10
-2
PSMN011-30YL
Min
-
10
P
-1
t
Typ
1.78
p
T
t
p
© NXP B.V. 2011. All rights reserved.
(s)
003aaf434
δ =
Max
3.07
t
T
p
t
1
Unit
K/W
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