PSMN011-30YL,115 NXP Semiconductors, PSMN011-30YL,115 Datasheet - Page 3

• Manufacturer Part Number: PSMN011-30YL,115
• Description: MOSFET Power N-Ch 30V Trench MOS logic level FET
• Manufacturer: NXP Semiconductors

Specifications of PSMN011-30YL,115

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 49 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Fall Time: 5 ns
• Gate Charge Qg: 7.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 8 ns
• Lead Free Status / Rohs Status: Details
• Other names: 934064949115

NXP Semiconductors
PSMN011-30YL
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
(A)
I
10
D
10
10
10
60
40
20
-1
3
2
1
0
10
mounting base temperature
Continuous drain current as a function of
T
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
mb
= 25°C; I
50
DM
is single pulse
100
Limit R
150
DSon
All information provided in this document is subject to legal disclaimers.
T
003aaf432
mb
1
= V
(°C)
DS
200
N-channel 10.7 mΩ 30 V TrenchMOS logic level FET in LFPAK
/ I
Rev. 2 — 17 May 2011
D
Fig 2.
P
(%)
der
120
80
40
DC
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
50
PSMN011-30YL
100
V
DS
(V)
1 ms
10 ms
100 μ s
100 ms
t
p
=10 μ s
150
© NXP B.V. 2011. All rights reserved.
T
003aaf433
mb
03aa16
(°C)
10
200
2
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