PSMN011-30YL,115 NXP Semiconductors, PSMN011-30YL,115 Datasheet - Page 11
![MOSFET Power N-Ch 30V Trench MOS logic level FET](/photos/40/31/403123/lfpak_sml.jpg)
PSMN011-30YL,115
Manufacturer Part Number
PSMN011-30YL,115
Description
MOSFET Power N-Ch 30V Trench MOS logic level FET
Manufacturer
NXP Semiconductors
Specifications of PSMN011-30YL,115
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
10.7 mOhms
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
36 A
Power Dissipation
49 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
LFPAK
Fall Time
5 ns
Gate Charge Qg
7.3 nC
Minimum Operating Temperature
- 55 C
Rise Time
8 ns
Lead Free Status / Rohs Status
Details
Other names
934064949115
NXP Semiconductors
8. Revision history
Table 7.
PSMN011-30YL
Product data sheet
Document ID
PSMN011-30YL v.2
Modifications:
PSMN011-30YL v.1
Revision history
20110517
20110112
Release date
•
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
N-channel 10.7 mΩ 30 V TrenchMOS logic level FET in LFPAK
Rev. 2 — 17 May 2011
Change notice
-
-
PSMN011-30YL
Supersedes
PSMN011-30YL v.1
-
© NXP B.V. 2011. All rights reserved.
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