74LVCV2G66GD,125 NXP Semiconductors, 74LVCV2G66GD,125 Datasheet - Page 6

• Manufacturer Part Number: 74LVCV2G66GD,125
• Description: IC SWITCH DUAL SPST 8XSON
• Manufacturer: NXP Semiconductors
• Type: Analog Switchr

Specifications of 74LVCV2G66GD,125

• Package / Case: 8-XSON
• Function: Switch
• Circuit: 2 x SPST - NO
• On-state Resistance: 7.3 Ohm
• Voltage Supply Source: Single Supply
• Voltage - Supply, Single/dual (±): 2.3 V ~ 5.5 V
• Current - Supply: 0.1µA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• On Resistance (max): 13 Ohms
• On Time (max): 4.7 ns
• Off Time (max): 7.9 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.3 V
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Propagation Delay Time: 0.2 ns, 0.3 ns, 0.4 ns
• Switch Current (typ): 0.0001 mA
• Package: 8XSON8U
• Maximum On Resistance: 30@2.7V Ohm
• Maximum Propagation Delay Bus To Bus: 0.2(Typ)@5.5V|0.3(Typ)@3.6V|0.4(Typ)@2.7V ns
• Maximum Low Level Output Current: 50 mA
• Maximum Turn-off Time: 7.9(Typ)@2.7V ns
• Maximum Turn-on Time: 4.7(Typ)@2.7V ns
• Switch Architecture: SPST
• Power Supply Type: Single
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 74LVCV2G66GD-G; 74LVCV2G66GD-G; 935286865125

NXP Semiconductors
Table 8.
At recommended operating conditions; voltages are referenced to GND (ground 0 V); for graphs see
[1]
[2]
74LVCV2G66
Product data sheet
Symbol
R
R
R
Fig 6. Test circuit for measuring OFF-state leakage
ON(peak)
ON(rail)
ON(flat)
All typical values are measured at T
Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical V
temperature.
current
V
V
I
Resistance R
IL
= GND and V
Parameter
ON resistance
(peak)
ON resistance (rail) V
ON resistance
(flatness)
V I
10.1 Test circuits
10.2 ON resistance
nE
nZ
O
ON
= GND or 5.5 V.
V
CC
GND
Conditions
V
see
V
V
amb
SW
SW
SW
SW
nY
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
SW
SW
SW
SW
SW
SW
SW
SW
SW
SW
SW
SW
SW
SW
SW
SW
Figure 8
= 25 °C and nominal V
= GND to V
= GND; V
= V
= GND to V
= 8 mA; V
= 12 mA; V
= 24 mA; V
= 32 mA; V
= 8 mA; V
= 12 mA; V
= 24 mA; V
= 32 mA; V
= 8 mA; V
= 12 mA; V
= 24 mA; V
= 32 mA; V
= 8 mA; V
= 12 mA; V
= 24 mA; V
= 32 mA; V
I
S
All information provided in this document is subject to legal disclaimers.
001aag488
CC
; V
V O
I
I
= V
= V
Rev. 3 — 16 June 2010
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
IH
; V
; V
IH
= 2.3 V to 2.7 V
= 2.3 V to 2.7 V
= 2.3 V to 2.7 V
= 2.5 V
= 2.7 V
= 3.0 V to 3.6 V
= 4.5 V to 5.5 V
= 2.7 V
= 3.0 V to 3.6 V
= 4.5 V to 5.5 V
= 2.7 V
= 3.0 V to 3.6 V
= 4.5 V to 5.5 V
= 2.7 V
= 3.3 V
= 5.0 V
; see
I
I
= V
= V
CC
IH
IH
Figure 8
.
;
Fig 7. Test circuit for measuring ON-state leakage
current
V
[2]
I
= 5.5 V or GND and V
V
IH
Min
−40 °C to +85 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Overvoltage tolerant bilateral switch
V I
I
S
Typ
8.3
7.4
8.5
8.0
7.5
7.3
8.5
7.2
6.5
5.7
13
10
17
10
5
3
nE
nZ
[1]
Max
74LVCV2G66
30
25
20
15
20
18
15
10
20
18
15
10
V
-
-
-
-
O
CC
GND
= open circuit.
−40 °C to +125 °C Unit
Figure 9
Min
nY
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
001aag489
© NXP B.V. 2010. All rights reserved.
V O
and
Max
30
25
20
15
20
18
15
10
20
18
15
10
CC
-
-
-
-
Figure
and
6 of 23
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
10.