MT46V32M16P-5B:J Micron Technology Inc, MT46V32M16P-5B:J Datasheet - Page 88

• Manufacturer Part Number: MT46V32M16P-5B:J
• Description: IC SDRAM 512MB 200MHZ 66TSOP
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT46V32M16P-5B:J

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP (0.400", 10.16mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 52:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. O; Core DDR Rev. D 2/11 EN
Case 1: t AC (MIN) and t DQSCK (MIN)
Case 2: t AC (MAX) and t DQSCK (MAX)
Command
BA0, BA1
Address
DQ
DQ
DQS
DQS
CK#
CKE
A10
DM
CK
6
6
Bank READ – with Auto Precharge
t IS
t IS
NOP
T0
t IH
1
t IH
Notes:
Bank x
IS
t IS
Row
ACT
Row
1. NOP commands are shown for ease of illustration; other commands may be valid at these
2. BL = 4.
3. The READ command can only be applied at T3 if
4. Enable auto precharge.
5.
6. DO n = data-out from column n; subsequent elements are provided in the programmed
7. Refer to Figure 36 on page 72, Figure 37 on page 73, and Figure 38 on page 74 for detailed
T1
t IH
IH
times.
t
order.
DQS and DQ timing.
t CK
RP starts only after
t RCD, t RAP 3
t RAS
t RC
NOP
T2
1
t CH
t CL
READ
t IS
Bank x
4
Col n
t
T3
RAS has been satisfied.
t IH
2,3
t LZ (MIN)
CL = 2
88
NOP
T4
t RPRE
1
t LZ (MIN)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t RPRE
NOP
T5
t DQSCK (MIN)
DO
t DQSCK (MAX)
1
n
512Mb: x4, x8, x16 DDR SDRAM
t AC (MIN)
DO
t
t AC (MAX)
n
RAP is satisfied at T3.
T5n
t RP 5
NOP
T6
1
Transitioning Data
t HZ (MAX)
T6n
t RPST
©2000 Micron Technology, Inc. All rights reserved.
t RPST
NOP
T7
1
Operations
Don’t Care
Bank x
ACT
Row
T8
Row