MT46V32M16P-5B:J Micron Technology Inc, MT46V32M16P-5B:J Datasheet - Page 38

• Manufacturer Part Number: MT46V32M16P-5B:J
• Description: IC SDRAM 512MB 200MHZ 66TSOP
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT46V32M16P-5B:J

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP (0.400", 10.16mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. O; Core DDR Rev. D 2/11 EN
16. The CK/CK# input reference level (for timing referenced to CK/CK#) is the point at
17. Inputs are not recognized as valid until V
18. The output timing reference level, as measured at the timing reference point (indi-
19.
20. The intent of the “Don’t Care” state after completion of the postamble is the DQS-
21. This is not a device limit. The device will operate with a negative value, but system
22. It is recommended that DQS be valid (HIGH or LOW) on or before the WRITE com-
23. MIN (
24. The refresh period is 64ms. This equates to an average refresh rate of 7.8125µs. How-
25. The I/O capacitance per DQS and DQ byte/group will not differ by more than this
26. The data valid window is derived by achieving other specifications:
27. Referenced to each output group: x4 = DQS with DQ0–DQ3; x8 = DQS with DQ0–DQ7;
28. This limit is actually a nominal value and does not result in a fail value. CKE is HIGH
29. To maintain a valid level, the transitioning edge of the input must:
30. The input capacitance per pin group will not differ by more than this maximum
29b. Reach at least the target AC level.
29a. Sustain a constant slew rate from the current AC level through to the target AC
29c. After the AC target level is reached, continue to maintain at least the target DC
which CK and CK# cross; the input reference level for signals other than CK/CK# is
V
refresh mode, V
period before V
cated in Note 3), is V
t
tions. These parameters are not referenced to a specific voltage level, but specify
when the device output is no longer driving (High-Z) or begins driving (Low-Z).
driven signal should either be HIGH, LOW, or High-Z, and that any signal transition
within the input switching region must follow valid input requirements. That is, if
DQS transitions HIGH (above V
V
performance could be degraded due to bus turnaround.
mand. The case shown (DQS going from High-Z to logic LOW) applies when no
WRITEs were previously in progress on the bus. If a previous WRITE was in progress,
DQS could be HIGH during this time, depending on
minimum absolute value for the respective parameter.
ments is the largest multiple of
ever, an AUTO REFRESH command must be asserted at least once every 70.3µs; burst
refreshing or posting by the DRAM controller greater than 8 REFRESH cycles is not
allowed.
maximum amount for any given device.
t
tion to the clock duty cycle and a practical data valid window can be derived. The
clock is allowed a maximum duty cycle variation of 45/55, because functionality is
uncertain when operating beyond a 45/55 ratio. The data valid window derating
curves are provided in Figure 13 on page 39 for duty cycles ranging between 50/50
and 45/55.
x16 = LDQS with DQ0–DQ7 and UDQS with DQ8–DQ15.
during the REFRESH command period (
standby).
amount for any given device.
HZ and
DQSQ, and
REF
IH
[
level, V
level, V
DC
.
t
RC or
] prior to
t
LZ transitions occur in the same access time windows as data valid transi-
IL
IL
t
t
(
(
RFC) for I
QH (
AC
DC
REF
REF
) or V
t
) or V
DQSH [MIN]).
t
QH =
stabilizes, CKE < 0.3 × V
must be powered within specified range. Exception: during the
TT
IH
IH
DD
.
(
(
t
AC
DC
HP -
measurements is the smallest multiple of
).
38
).
t
QHS). The data valid window derates in direct propor-
t
IH
CK that meets the maximum absolute value for
[
DC
Micron Technology, Inc., reserves the right to change products or specifications without notice.
] MIN) then it must not transition LOW (below
Electrical Specifications – DC and AC
t
REF
RFC [MIN]), else CKE is LOW (that is, during
DD
512Mb: x4, x8, x16 DDR SDRAM
stabilizes. Once initialized, including self
is recognized as LOW.
t
DQSS.
t
RAS (MAX) for I
©2000 Micron Technology, Inc. All rights reserved.
t
CK that meets the
t
HP (
DD
t
CK/2),
measure-
t
RAS.