MT46V32M16P-5B:J Micron Technology Inc, MT46V32M16P-5B:J Datasheet - Page 79

• Manufacturer Part Number: MT46V32M16P-5B:J
• Description: IC SDRAM 512MB 200MHZ 66TSOP
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT46V32M16P-5B:J

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP (0.400", 10.16mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 43:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. O; Core DDR Rev. D 2/11 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-READ – Uninterrupting
Notes:
Bank a,
WRITE
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. DI b = data-in for column b; DO n = data-out for column n.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. An uninterrupted burst of 4 is shown.
4.
5. The READ and WRITE commands are to the same device. However, the READ and WRITE
6. A10 is LOW with the WRITE command (auto precharge is disabled).
t
commands may be to different devices, in which case
command could be applied earlier.
DI
b
WTR is referenced from the first positive CK edge after the last data-in pair.
NOP
T1
DI
b
DI
b
T1n
NOP
T2
T2n
79
T3
NOP
t
WTR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Bank a,
READ
Col n
T4
512Mb: x4, x8, x16 DDR SDRAM
Transitioning Data
t
WTR is not required, and the READ
CL = 2
CL = 2
CL = 2
T5
NOP
©2000 Micron Technology, Inc. All rights reserved.
T6
NOP
Operations
Don’t Care
DO
DO
DO
n
n
n
T6n