MT46V16M16P-5B:M Micron Technology Inc, MT46V16M16P-5B:M Datasheet - Page 16

• Manufacturer Part Number: MT46V16M16P-5B:M
• Description: IC SDRAM 256MB 200MHZ 66TSOP
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT46V16M16P-5B:M

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP (0.400", 10.16mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 7:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
256Mb_DDR_x4x8x16_D2.fm - 256Mb DDR: Rev. P, Core DDR: Rev. D 2/11 EN
Parameter/Condition
Operating one-bank precharge current:
t
cycle; Address and control inputs changing once every two clock cycles
Operating one-bank active-read-precharge current: Burst = 4;
t
inputs changing once per clock cycle
Precharge power-down standby current: All banks idle; Power-
down mode;
Idle standby current: CS# = HIGH; All banks are idle;
CKE = HIGH; Address and other control inputs changing once per clock
cycle; V
Active power-down standby current: One bank active; Power-
down mode;
Active standby current: CS# = HIGH; CKE = HIGH; One bank active;
t
twice per clock cycle; Address and other control inputs changing once
per clock cycle
Operating burst read current: Burst = 2;
One bank active; Address and control inputs changing once per clock
cycle;
Operating burst write current: Burst = 2; Continuous burst writes;
One bank active; Address and control inputs changing once per clock
cycle;
clock cycle
Auto refresh burst current:
Self refresh current: CKE ≤ 0.2V
Operating bank interleave read current: Four-bank interleaving
READs (burst = 4) with auto precharge;
t
ACTIVE, READ, or WRITE commands
CK =
RC =
RC =
CK =
t
t
t
t
t
t
RC (MIN);
RAS (MAX);
CK (MIN); DQ, DM, and DQS inputs changing once per clock
CK (MIN); Address and control inputs change only during
CK =
CK =
IN
= V
t
t
CK (MIN);
CK (MIN); DQ, DM, and DQS inputs changing twice per
REF
t
t
I
V
0°C ≤ T
CK =
CK =
DD
DD
for DQ, DQS, and DM
t
CK =
Q = +2.6V ±0.1V, V
Specifications and Conditions (x4, x8, x16: -5B, -6, -6T) - Die Revision M Only
t
t
t
CK =
CK (MIN); CKE = LOW
CK (MIN); CKE = LOW
A
≤ +70°C; Notes: 1–5, 11, 13, 15, 47; Notes appear on pages 34–39; See also Table 8 on page 17
t
I
CK (MIN); I
OUT
t
CK (MIN); DQ, DM, and DQS inputs changing
= 0mA
OUT
DD
= 0mA; Address and control
= +2.6V ±0.1V (-5B); V
t
RC = minimum
t
RC =
Continuous burst reads;
t
RC (MIN);
t
t
Standard
Low power (L)
REFC =
REFC = 7.8µs
t
CK =
t
RC allowed;
t
16
t
RFC (MIN)
CK (MIN);
DD
Q = +2.5V ±0.2V, V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
I
I
I
I
I
I
I
I
DD
DD
DD
DD
I
I
DD
I
I
I
DD
DD
DD
DD
DD
DD
DD
DD
4W
3N
5A
6A
4R
2P
2F
3P
256Mb: x4, x8, x16 DDR SDRAM
0
1
5
6
7
Electrical Specifications – I
DD
= +2.5V ±0.2V (-6, -6T);
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
-5B
©2003 Micron Technology, Inc. All rights reserved.
-6/6T
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
23, 48
23, 48
23, 49
24, 33
24, 33
23, 48
28, 50
51
23
23
50
12
12
DD