MT46V16M16P-5B:M Micron Technology Inc, MT46V16M16P-5B:M Datasheet - Page 15

• Manufacturer Part Number: MT46V16M16P-5B:M
• Description: IC SDRAM 256MB 200MHZ 66TSOP
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT46V16M16P-5B:M

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP (0.400", 10.16mm Width)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Specifications – I
Table 6:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
256Mb_DDR_x4x8x16_D2.fm - 256Mb DDR: Rev. P, Core DDR: Rev. D 2/11 EN
Parameter/Condition
Operating one-bank precharge current:
t
clock cycle; Address and control inputs changing once every
two clock cycles
Operating one-bank active-read-precharge current:
Burst = 4;
Address and control inputs changing once per clock cycle
Precharge power-down standby current: All banks idle;
Power-down mode;
Idle standby current: CS# = HIGH; All banks are idle;
t
inputs changing once per clock cycle; V
and DM
Active power-down standby current: One bank active;
Power-down mode;
Active standby current: CS# = HIGH; CKE = HIGH; One bank
active;
inputs changing twice per clock cycle; Address and other
control inputs changing once per clock cycle
Operating burst read current: Burst = 2;
burst reads; One bank active; Address and control inputs
changing once per clock cycle;
Operating burst write current: Burst = 2; Continuous burst
writes; One bank active; Address and control inputs changing
once per clock cycle;
changing twice per clock cycle
Auto refresh burst current:
Self refresh current: CKE ≤ 0.2V
Operating bank interleave read current: Four-bank
interleaving READs (burst = 4) with auto precharge;
t
control inputs change only during ACTIVE, READ, or WRITE
commands
CK =
CK =
RC = minimum
t
t
CK (MIN); DQ, DM, and DQS inputs changing once per
CK (MIN); CKE = HIGH; Address and other control
t
RC =
t
RC =
t
RAS (MAX);
II
V
0°C ≤ T
DD
DD
t
t
RC (MIN);
RC allowed;
Q = +2.6V ±0.1V, V
Specifications and Conditions (x4, x8, x16: -5B, -6, -6T) - Die Revision K Only
t
t
A
t
CK =
CK =
CK =
≤ +70°C; Notes: 1–5, 11, 13, 15, 47; Notes appear on pages 34–39; See also Table 8 on page 17
t
t
t
CK =
t
t
CK (MIN); CKE = LOW
CK (MIN); CKE = LOW
CK =
CK (MIN); DQ, DM, and DQS inputs
t
CK =
t
CK =
t
CK (MIN); DQ, DM, and DQS
t
CK (MIN); I
t
CK (MIN); Address and
DD
t
CK (MIN);
IN
= +2.6V ±0.1V (-5B); V
= V
t
t
Standard
Low power (L)
REFC =
REFC =7.8µs
OUT
t
REF
RC =
DD
Continuous
I
= 0mA;
for DQ, DQS,
OUT
t
RC (MIN);
t
RFC (MIN)
= 0mA
15
DD
Q = +2.5V ±0.2V, V
Symbol
I
I
I
I
I
I
I
I
DD
DD
DD
DD
I
I
DD
DD
DD
I
I
I
DD
DD
DD
DD
DD
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
4W
3N
5A
6A
2P
3P
4R
2F
0
1
5
6
7
256Mb: x4, x8, x16 DDR SDRAM
-5B
100
120
180
180
160
290
50
35
60
Electrical Specifications – I
4
6
4
2
DD
= +2.5V ±0.2V (-6, -6T);
-6/6T
115
160
160
160
270
90
50
30
55
4
6
4
2
©2003 Micron Technology, Inc. All rights reserved.
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
23, 48
23, 48
24, 33
24, 33
23, 48
28, 50
23, 49
51
23
23
50
12
12
DD