N25Q128A11B1240F Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC., N25Q128A11B1240F Datasheet - Page 88
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N25Q128A11B1240F
Manufacturer Part Number
N25Q128A11B1240F
Description
IC SRL FLASH 128MB NMX 24-BGA
Manufacturer
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC.
Series
Forté™r
Datasheet
1.N25Q128A11B1241F.pdf
(185 pages)
Specifications of N25Q128A11B1240F
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
108MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
24-TBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
N25Q128A11B1240F
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
N25Q128A11B1240F
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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S
C
DQ0
DQ1
polling instructions (to check if the internal cycle is finished by mean of the WIP bit of the
Status Register or of the Program/Erase controller bit of the Flag Status register): to verify if
the POR sequence is completed is possible to check the WIP bit in the Status Register or
the Program/Erase Controller bit in the Flag Status Register, please note that the
Program/Erase Controller bit in the Flag status register has the reverse logical polarity with
respect to the Status Register WIP bit.
At the end of the POR sequence the WEL bit is low, so the next modify instruction can be
accepted.
Figure 18. Write Enable instruction sequence
Write Disable (WRDI)
The Write Disable (WRDI) instruction (Figure 9) resets the Write Enable Latch (WEL) bit.
The Write Disable (WRDI) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
High Impedance
0
1
2
Instruction
3
4
5
6
7
AI13731
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