RC28F128J3D75D Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC., RC28F128J3D75D Datasheet
RC28F128J3D75D
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872828TR
872828TR
RC28F128J3D75 S L8QN
RC28F128J3D75D
RC28F128J3D75DTR
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RC28F128J3D75D Summary of contents
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... Numonyx™ Embedded Flash Memory ( 32, 64, 128, and 256 Mbit (Monolithic) Product Features Architecture — Symmetrical 128-Kbyte blocks — 256 Mbit (256 blocks) — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) Performance — Initial Access Speed (32,64,128 Mbit densities) — ...
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INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR Legal L ines and D isc laim er s OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Contents 1.0 Introduction .............................................................................................................. 6 1.1 Nomenclature ..................................................................................................... 6 1.2 Acronyms........................................................................................................... 6 1.3 Conventions ....................................................................................................... 7 2.0 Functional Overview .................................................................................................. 8 2.1 Block Diagram .................................................................................................. 10 2.2 Memory Map..................................................................................................... 11 3.0 Package Information ............................................................................................... 12 3.1 56-Lead TSOP Package, 32-, 64-, 128-, and 256-Mbit ............................................ 12 3.2 Easy BGA Package, 32-, 64-, 128-, and 256-Mbit .................................................. 13 4 ...
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... Query Structure Overview...................................................................................59 13.3 Block Status Register .........................................................................................60 13.4 CFI Query Identification String ............................................................................60 13.5 System Interface Information ..............................................................................61 13.6 Device Geometry Definition .................................................................................61 13.7 Primary-Vendor Specific Extended Query Table ......................................................62 A Additional Information.............................................................................................65 B Ordering Information ...............................................................................................66 Datasheet 4 Numonyx™ Embedded Flash Memory ( Monolithic) December 2007 316577-06 ...
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... Description February 2007 001 Initial release Revised the following graphics to support 256Mbit: • Figure 1, “Intel® Embedded Flash Memory ( Memory Block Diagram (32, 64 and 128, 256Mbit)” March 2007 002 on page 10 • Figure 5, “Easy BGA Ballout (32/64/128/256 Mbit)” on page 15 • ...
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... This document contains information pertaining to the Numonyx™ Embedded Flash Memory ( device features, operation, and specifications. The Numonyx™ Embedded Flash Memory J3 Version D ( provides improved mainstream performance with enhanced security features, taking advantage of the high quality and reliability of the NOR-based Intel 0.13 µm ETOX* VIII process technology. Offered in 256-Mbit, 128-Mbit, 64-Mbit, and 32-Mbit densities, theNumonyx™ ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) PR Protection Register PRD Protection Register Data RFU Reserved for Future Use SR Status Register SRD Status Register Data WSM Write State Machine ECR Enhanced Configuration Register 1.3 Conventions h: Hexadecimal Suffix k (noun): 1,000 M (noun): 1,000,000 Nibble 4 bits ...
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... The Scalable Command Set (SCS) allows a single, simple software driver in all host systems to work with all SCS-compliant flash memory devices, independent of system- level packaging (e.g., memory card, SIMM, or direct-to-board placement). Additionally, SCS provides the highest system/device data transfer rates and minimizes device and system-level implementation costs ...
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... BYTE#-low enables 8-bit mode; address A0 selects between the low byte and high byte. • BYTE#-high enables16-bit operation; address A1 becomes the lowest order address and address A0 is not used (don’t care). Figure 1, “Memory Block Diagram, 32-, 64-, 128-, and 256-Mbit (monolithic)” on page 10 shows a device block diagram. When the device is disabled (see and 256-Mb” ...
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... Block Diagram Figure 1: Memory Block Diagram, 32-, 64-, 128-, and 256-Mbit (monolithic) V CCQ 32-Mbit Y-Decoder 64-Mbit Input Buffer 128-Mbit 256-Mbit Address Latch X-Decoder Address Counter Datasheet 10 Numonyx™ Embedded Flash Memory ( Monolithic Output Input Buffer Buffer Query Identifier Register Status Register ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) 2.2 Memory Map Figure 2: Numonyx™ Embedded Flash Memory ( Monolithic) Memory Map A[24-0]: 256 Mbit A [23-0]:128 Mbit A [22-0]: 64 Mbit A [21-0]: 32 Mbit 1FFFFFF 128-Kbyte Block 1FE0000 0FFFFFF 128-Kbyte Block 0FE0000 07FFFFF 128-Kbyte Block 07E0000 03FFFFF ...
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... TSOP Dimension Table Parameter Symbol Package Height Standoff Package Body Thickness Lead Width Lead Thickness Package Body Length Package Body Width Lead Pitch Terminal Dimension Lead Tip Length Datasheet 12 Numonyx™ Embedded Flash Memory ( Monolithic) See Note 2 See Notes 1 and Detail Millimeters Min ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Table 1: 56-Lead TSOP Dimension Table Parameter Symbol Lead Count Lead Tip Angle Seating Plane Coplanarity Lead to Package Offset 3.2 Easy BGA Package, 32-, 64-, 128-, and 256-Mbit Figure 4: Easy BGA Mechanical Specifications Ball A1 Corner Top View - Plastic Backside ...
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... Seating Plane Coplanarity Corner to Ball A1 Distance Along D (32/64/128/ 256 Mb) Corner to Ball A1 Distance Along E (32/64/128/ 256 Mb) Notes: 1. For Daisy Chain Evaluation Unit information refer to packaging informaiton at: www.Numonyx.com. Datasheet 14 Numonyx™ Embedded Flash Memory ( Monolithic) Millimeters Symb ol Min Nom Max D 9.900 10.000 10.100 E 12 ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) 4.0 Ballouts and Signal Descriptions Numonyx™ Embedded Flash Memory ( available in two package types. All densities of the Numonyx™ Embedded Flash Memory ( Monolithic) devices are supported on both 64-ball Easy BGA and 56-lead Thin Small Outline Package (TSOP) packages ...
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... A24 exists on 256-Mbit densities and on the other densities this signal is a no-connect (NC). 4.3 Signal Descriptions Table 3 lists the active signals used on Numonyx™ Embedded Flash Memory ( Monolithic) and provides a description of each. Table 3: Signal Descriptions for Numonyx™ Embedded Flash Memory ( Monolithic) ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Table 3: Signal Descriptions for Numonyx™ Embedded Flash Memory ( Monolithic) (Sheet Symbol Type HIGH-BYTE DATA BUS: Inputs data during x16 buffer writes and programming operations. Input/ D[15:8] Outputs array, CFI, or identifier data in the appropriate read mode; not used for Status Register Output reads ...
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... Power-Up/Down Characteristics To prevent conditions that could result in spurious program or erase operations, the power-up/power-down sequence shown in characteristics refer to voltage range before applying/removing the next supply voltage. Datasheet 18 Numonyx™ Embedded Flash Memory ( Monolithic) Min , Ambient) –40 –65 –2.0 –2.0 –2.0 — ...
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... After return from reset, the flash device defaults to asynchronous page mode. If RP# is driven low during a program or erase operation, the program or erase operation will be aborted and the memory contents at the aborted block or address are no longer valid. See Waveform for Reset Operation” ...
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... I V Power-Down Current CCD CC I CCR V Page Mode Read Current CC 8-Word Page V Program or Set CC I CCW Lock-Bit Current Datasheet 20 Numonyx™ Embedded Flash Memory ( Monolithic) 2.7 - 3.6V 2.7 - 3.6V Typ Max Unit V CC ±1 μ ±10 μ CMOS Inputs, V VccqMax ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Table 7: DC Current Characteristics (Sheet CCQ V CC Symbol Parameter V Block Erase Clear Block Lock-Bits CCE Current V Program CC I Suspend or Block CCWS I Erase Suspend CCES Current Notes: 1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and speeds) ...
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... Symbol C Input Capacitance IN C Output Capacitance OUT Notes: 1. sampled.not 100% tested +25 ° MHZ A Datasheet 22 Numonyx™ Embedded Flash Memory ( Monolithic) 2.7 - 3.6 V 2.7 - 3.6 V Min Max 2.7 3.6 2.0 (min), and above V (max). PENH PENH (min), and above V (max and can overshoot to V ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) 7.0 AC Characteristics Timing symbols used in the timing diagrams within this document conform to the following convention Figure 7: Timing Signal Naming Convention Source Signal Source State Figure 8: Timing Signal Name Decoder Signal Address A Data - Read Q Data - Write ...
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... Figure 15, “AC Input/Output Reference Waveform” on page 30 4. See Equivalent Testing Load Circuit” on page 30 5. Sampled, not 100% tested. 6. For devices configured to standard word/byte read mode, R15 (t Datasheet 24 Numonyx™ Embedded Flash Memory ( Monolithic) (3) = 2.7 V–3.6 V and V CC Density 32 Mbit 64 Mbit 128 Mbit 256 Mbit ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Figure 9: Single Word Asynchronous Read Waveform Address [A] CEx [E] OE# [G] WE# [ Data [D/Q] R11 BYTE#[F] R5 RP# [P] Notes low is defined as the last edge of CE0, CE1, or CE2 that enables the device CE0, CE1, or CE2 that disables the device (see 256-Mb” ...
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... AVQV Output Delay X ELQV Notes: 1. This is the recommended specification for all new designs supporting both 130nm and 65nm lithos, or for new designs that will use the 65nm lithography. Datasheet 26 Numonyx™ Embedded Flash Memory ( Monolithic R10 R7 R15 Table 16, “Chip Enable Truth Table for 32-, 64-, 128- and (3) = 2.7 V– ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) C Table 12: Write Operations # Symbol RP# High Recovery to WE# (CE PHWL PHEL (WE#) Low to WE# (CE ELWL WLEL Write Pulse Width Data Setup to WE# (CE DVWH DVEH Address Setup to WE# (CE AVWH AVEH (WE#) Hold from WE# (CE WHEH EHWH Data Hold from WE# (CE ...
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... Figure 12: Asynchronous Write Waveform ADDRESS [A] CEx (WE#) [E (W)] WE# (CEx) [W (E)] OE# [G] DATA [D/Q] STS[R] W1 RP# [P] VPEN [V] Figure 13: Asynchronous Write to Read Waveform Address [A] CE# [E] WE# [W] OE# [G] Data [D/Q] W1 RST #/ RP# [P] VPEN [V] Datasheet 28 Numonyx™ Embedded Flash Memory ( Monolithic W11 W11 W13 W8 W6 ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) 7.2 Program, Erase, Block-Lock Specifications Table 13: Configuration Performance # Symbol Write Buffer Byte Program Time W16 (Time to Program 32 bytes/16 words) Byte Program Time (Using Word/Byte Program Command) for 130nm t WHQV3 W16 t Byte Program Time (Using Word/Byte Program Command) ...
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... Figure 17: Test Configuration Test Configuration CCQ CCQMIN Datasheet 30 Numonyx™ Embedded Flash Memory ( Monolithic) Parameter , this specification is not applicable) CC Test Points for a Logic "1" and 0.0 V for a Logic "0." Input timing begins, and output timing ends, at Device Under Test Min ...
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... Write State Machine (WSM) manages all erase and program algorithms. The system CPU provides control of all in-system read, write, and erase operations through the system bus. All bus cycles to or from the flash memory conform to standard microprocessor bus cycles. signal for different modes of operations. ...
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... Asynchronous Page Mode Read There are two Asynchronous Page mode configurations available on Numonyx™ Embedded Flash Memory ( Monolithic) , depending on the system design requirements: • Four-Word Page mode: This is the default mode on power-up or reset. Array data can be sensed up to four words (8 Bytes time. ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Note: For forward compatibility reasons, if the 8-word Asynchronous Page mode is used on Numonyx™ Embedded Flash Memory ( Monolithic Clear Status Register command must be executed after issuing the Set ECR command. See further details. Table 17: Enhanced Configuration Register ...
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... The CUI does not occupy an addressable memory location written when the device is enabled and WE# is active. The address and data needed to execute a command are latched on the rising edge of WE# or the first edge of CE0, CE1, or CE2 that disables the device (see Table 16 on page 8 ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Table 19: Command Bus Operations Command Program Enhanced Configuration Register Program OTP Register Clear Status Register Program STS Configuration Register Read Array Read Status Register Read Identifier Codes (Read Device Information) CFI Query Word/Byte Program Buffered Program ...
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... Flash Operations This section describes the operational features of flash memory. Operations are command-based, wherein command codes are first issued to the device, then the device performs the desired operation. All command codes are issued to the device using bus-write cycles (see command codes can be found in 9 ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) 9.1.1 Clearing the Status Register The Status Register (SR) contain Status and error bits which are set by the device. SR status bits are cleared by the device, however SR error bits are cleared by issuing the Clear SR command (see Table 21: Clear Status Register Command Bus-Cycle ...
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... All programming operations require the addressed block to be unlocked, and a valid VPEN voltage applied throughout the programming operation. Otherwise, the programming operation will abort, setting the appropriate Status Register error bit(s). The following sections describe each programming method. Datasheet 38 Numonyx™ Embedded Flash Memory ( Monolithic) December 2007 316577-06 ...
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... Buffered programming operations simultaneous program multiple words into the flash memory array, significantly reducing effective word-write times. User-data is first written to a write buffer, then programmed into the flash memory array in buffer-size increments. For additional details, see the flow chart of the buffered-programming operation ...
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... Note: After issuing the confirm command, write-buffer contents are programmed into the flash memory array. The Status Register indicates a busy status (SR during array programming.Issuing the Read Array command to the device while it is actively programming or erasing causes subsequent reads from the device to output invalid data ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Standby power levels are not be realized until the block-erase operation has finished. Also, asserting RP# aborts the block-erase operation, and array contents at the addressed location are indeterminate. The addressed block should be erased before programming within the block is attempted. ...
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... Check SR.7 for device status. An invalid configuration code will result in SR.4 and SR.5 being set. Note: STS Pulse mode is not supported in the Clear Lock Bits and Set Lock Bit commands. Datasheet 42 Numonyx™ Embedded Flash Memory ( Monolithic) Program Suspend Not Allowed Not Allowed Not Allowed (Table 26) ...
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... Normal Block Locking Numonyx™ Embedded Flash Memory ( Monolithic) has the unique capability of Flexible Block Locking (locked blocks remain locked upon reset or power cycle): All blocks are unlocked at the factory. Blocks can be locked individually by issuing the Set Block Lock Bit command sequence to any address within a block ...
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... Configurable Block Locking One of the unique new features on the Numonyx™ Embedded Flash Memory ( Monolithic) ,which did not exist on the previous generations of this product family, is the ability to protect and/or secure the user’s system by offering multiple level of securities: Non-Volatile Temporary ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) 9.7.6 Locking the OTP Protection Register The user-programmable segment of the PR is lockable by programming Bit 1 of the Protection Lock Register (PLR Bit 0 of this location is programmed the Numonyx factory to protect the unique device number. Bit 1 is set using the Protection Program command to program “ ...
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... VPP or VPEN, blocks within the main array cannot be altered – attempts to program or erase blocks will fail resulting in the setting of the appropriate error bit in the Status Register. By holding VPP or VPEN low, absolute write protection of all blocks in the array can be achieved. Datasheet 46 Numonyx™ Embedded Flash Memory ( Monolithic ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) 10.0 ID Codes Table 31: Read Identifier Codes Code Device Code December 2007 316577-06 Address 32-Mbit 00001h 64-Mbit 00001h 128-Mbit 00001h 256-Mbit 00001h Data 0016h 0017h 0018h 001Dh Datasheet 47 ...
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... Word/Byte Program Buffered Program Block Erase Program/Erase Suspend Program/Erase Resume Lock Block Unlock Block Datasheet 48 Numonyx™ Embedded Flash Memory ( Monolithic) Section 8.4, “Device Commands” Setup Write Cycle Confirm Write Cycle Address Bus Data Bus Address Bus Register Data 0060h ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) 12.0 Flow Charts Figure 19: Write to Buffer Flowchart December 2007 316577-06 Start Setup - Write 0xE8 - Block Address Check Buffer Status - Perform read operation - Read Ready Status on signal SR7 No SR7 = 1? Yes Word Count - Address = block address - Data = word count minus 1 ...
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... Address = any dev ice address - Data = 0x70 - Read Status Register SR[7:0] - Set/Reset by WSM - Set by WSM - Reset by user - See Clear Status Register Command Datasheet 50 Numonyx™ Embedded Flash Memory ( Monolithic) Start Data Cycle No SR7 = ' Erase Suspend SR6 = '1' See Suspend/Resume Flowchart Program Suspend ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Figure 21: Byte/Word Program Flowchart Start Write 40H, Address Write Data and Address Read Status Register 0 SR Full Status Check if Desired Byte/Word Program Complete FULL STATUS CHECK PROCEDURE Read Status Register Data (See Above) 1 SR.3 = Voltage Range Error ...
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... Start Write B0H Read Status Register SR SR Write FFH Read Data Array Done Reading Yes Write D0H Programming Resumed Datasheet 52 Numonyx™ Embedded Flash Memory ( Monolithic) Bus Operation Write Read Standby Standby 0 Write Read 0 Programming Completed Write No Write FFH Read Array Data ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Figure 23: Block Erase Flowchart Start Issue Single Block Erase Command 20H, Block Address Write Confirm D0H Block Address Read Status Register 0 SR Full Status Check if Desired Erase Flash Block(s) Complete December 2007 316577-06 Bus Operation ...
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... Read Status Register SR SR Read Read or Program? Read Array No Data Done? Yes Write D0H Block Erase Resumed Datasheet 54 Numonyx™ Embedded Flash Memory ( Monolithic) Bus Operation Write Read Standby Standby 0 Write 0 Block Erase Completed Program Program Loop Write FFH Read Array Data ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Figure 25: Set Block Lock-Bit Flowchart Start Write 60H, Block Address Write 01H, Block Address Read Status Register 0 SR Full Status Check if Desired Set Lock-Bit Complete FULL STATUS CHECK PROCEDURE Read Status Register Data (See Above ...
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... Command Sequence SR.4 Clear Block Lock-Bits SR Clear Block Lock-Bits Successful Datasheet 56 Numonyx™ Embedded Flash Memory ( Monolithic) Bus Command Operation Clear Block Write Lock-Bits Setup Clear Block or Write Lock-Bits Confirm Read Standby Write FFH after the clear lock-bits operation to place device in read array mode ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Figure 27: Protection Register Programming Flowchart Start Write C0H (Protection Reg. Program Setup) Write Protect. Register Address/Data Read Status Register No SR Yes Full Status Check if Desired Program Complete FULL STATUS CHECK PROCEDURE Read Status Register Data (See Above ...
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... Query start location in Type/ maximum device bus Mode width addresses x16 device 10h x16 mode x16 device Datasheet 58 Numonyx™ Embedded Flash Memory ( Monolithic) Query data with maximum device bus width addressing Hex ASCII Hex Code Offset Value 10: 0051 “Q” ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Table 33: Summary of Query Structure Output as a Function of Device and Mode Device Query start location in Type/ maximum device bus Mode width addresses (1) x8 mode N/A Note: 1. The system must drive the lowest order addresses to access all the device's array data when the device is configured in x8 mode. Therefore, word addressing, where these lower addresses are not toggled by the system, is " ...
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... Alternate vendor command set and control interface ID code. 0000h means no second vendor-specified algorithm exists 19h 2 Secondary algorithm Extended Query Table address. 0000h means none exists Datasheet 60 Numonyx™ Embedded Flash Memory ( Monolithic) Description Flash Device Layout Vendor-Defined Additional Information Specific to the Primary Vendor Algorithm Description Description Notes ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) 13.5 System Interface Information The following device information can optimize system interface software. Table 38: System Interface Information Offset Length V logic supply minimum program/erase voltage CC 1Bh 1 bits 0–3 BCD 100 mV bits 4–7 BCD volts V logic supply maximum program/erase voltage ...
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... Protection bits supported bit 7 Page-mode read supported bit 8 Synchronous read supported bit9 Simultaneous Operation Supported bit 30 CFI Link(s) to follow (32, 64, 128, 256 Mb) bit 31 Another “Optional Feature” field to follow Datasheet 62 Numonyx™ Embedded Flash Memory ( Monolithic) 64 Mbit 128 Mbit --17 --18 --02 --02 --00 ...
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... Numonyx™ Embedded Flash Memory ( Monolithic) Table 41: Primary Vendor-Specific Extended Query (Sheet (1) Offset Length P = 31h (Optional Flash Features and Commands) Supported functions after suspend: read Array, Status, Query Other supported operations are: (P+9)h 1 bits 1–7 reserved; undefined bits are “0” ...
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... J3C mark for VIL fix for customers Note: 1. The variable pointer which is defined at CFI offset 15h. Datasheet 64 Numonyx™ Embedded Flash Memory ( Monolithic) Description (Optional Flash Features and Commands) n HEX value represents the number of read- n+1 HEX value represents the maximum Hex Add ...
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... Numonyx™ Wireless Communications and Computing Package User’s Guide Note: Contact your local Numonyx or distribution sales office or visit the Numonyx home page technical documentation, tools, or the most current information on Numonyx™ Embedded Flash Memory ( December 2007 316577-06 Document/Tool http://www.numonyx.com ...
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... Mbit) Table 44: Valid Combinations 32-Mbit TE 28F320J3D-75 TE 28F640J3D-75 JS28F320J3D-75 JS28F640J3D-75 RC 28F320J3D-75 RC 28F640J3D-75 PC 28F320J3D-75 PC 28F640J3D-75 Datasheet 66 Numonyx™ Embedded Flash Memory ( Monolithic) 64-Mbit 128-Mbit TE 28F128J3D-75 JS28F128J3D-75 RC 28F128J3D-75 PC 28F128J3D-75 Access Speed (ns) 256 Mbit = 95 32/64/128 Mbit = 75 Lithography ® Intel 0.13 micron ETOX™ ...