STH210N75F6-2 STMicroelectronics, STH210N75F6-2 Datasheet - Page 8

• Manufacturer Part Number: STH210N75F6-2
• Description: MOSFET N-CH 75V 180A H2PAK-2
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STH210N75F6-2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 171nC @ 10V
• Input Capacitance (ciss) @ Vds: 11800pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11251-2

Package mechanical data
8/11
Table 8.
Figure 8.
Dim.
A1
H1
L1
L2
L3
L4
M
A
C
E
F
H
R
V
e
L
H²PAK 2 leads mechanical data
H²PAK 2 leads drawing
L3
H1
10.00
7.171
15.30
H
e
Min.
4.30
0.03
1.17
4.98
0.50
0.78
1.27
4.93
7.45
0.20
1.5
2.6
0°
F (x2)
Doc ID 018693 Rev 1
Typ.
mm
A1
A
E
0.25 Gouge Plane
C
STH210N75F6-2
10.40
7.971
15.80
Max.
4.80
0.20
1.37
5.18
0.90
0.85
1.40
5.23
7.85
0.60
1.7
2.9
8°
8159712_B