STH210N75F6-2 STMicroelectronics, STH210N75F6-2 Datasheet
STH210N75F6-2
Specifications of STH210N75F6-2
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STH210N75F6-2 Summary of contents
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... This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. N-channel 75 V, 0.0022 Ω , 180 A H²PAK-2 STripFET™ VI DeepGATE™ Power MOSFET max I DS(on) D < 0.0028 Ω 180 A Figure 1. Marking 210N75F6 Doc ID 018693 Rev 1 STH210N75F6-2 Preliminary data PAK-2 Internal schematic diagram Package Packaging 2 H PAK-2 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/ Doc ID 018693 Rev 1 STH210N75F6-2 ...
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... STH210N75F6-2 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating factor T Storage temperature stg T Operating junction temperature j 1. Current limited by package. Table 3. Thermal data ...
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... ± For H PAK Parameter Test conditions MHz 37 (see Figure 3) Parameter Test conditions 4.7 Ω (see Figure 2) Doc ID 018693 Rev 1 STH210N75F6-2 Min. Typ =125 ° 250 µ 2 Min. Typ. 11800 - 1060 394 171 = 120 Min. Typ 154 - 71 Max. Unit V 1 µA 100 µ ...
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... STH210N75F6-2 Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Current limited by package. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Parameter ...
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... Figure 5. 3.3 1000 μF μ AM01470v1 Figure 7. V (BR)DSS 10% 0 AM01472v1 Doc ID 018693 Rev 1 STH210N75F6-2 Gate charge test circuit 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 μF 2.7kΩ 47kΩ 1kΩ Unclamped inductive load test circuit 2200 3.3 μ ...
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... STH210N75F6-2 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 018693 Rev 1 Package mechanical data ® 7/11 ...
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... H F (x2 Doc ID 018693 Rev 1 STH210N75F6-2 mm Typ. Max. 4.80 0.20 1.37 5.18 0.90 0.85 10.40 7.971 15.80 1.40 5.23 7.85 1.7 2.9 0.60 8° 0.25 Gouge Plane ...
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... STH210N75F6-2 Figure 9. H²PAK2 recommended footprint (dimension in mm) Doc ID 018693 Rev 1 Package mechanical data 8159712_B 9/11 ...
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... Revision history 5 Revision history Table 9. Document revision history Date 23-May-2011 10/11 Revision 1 First release. Doc ID 018693 Rev 1 STH210N75F6-2 Changes ...
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... STH210N75F6-2 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...