STH210N75F6-2 STMicroelectronics, STH210N75F6-2 Datasheet - Page 4

• Manufacturer Part Number: STH210N75F6-2
• Description: MOSFET N-CH 75V 180A H2PAK-2
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STH210N75F6-2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 171nC @ 10V
• Input Capacitance (ciss) @ Vds: 11800pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11251-2

Electrical characteristics
2
4/11
Electrical characteristics
(T
Table 4.
Table 5.
Table 6.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
t
t
C
I
I
DS(on)
C
GS(th)
C
Q
Q
d(on)
d(off)
DSS
GSS
Q
t
oss
t
rss
iss
gs
gd
r
f
g
= 25 °C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Drain-source
Breakdown voltage
Zero gate voltage
Drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 018693 Rev 1
I
V
V
V
V
For H
V
D
V
R
(see Figure 2)
V
V
V
V
(see Figure 3)
GS
GS
DS
DS
DS
DD
DS
GS
DD
GS
G
= 250 µA, V
= max rating,T
= 4.7 Ω V
= max rating
= V
= ± 20 V
= 10 V, I
2
= 25 V, f = 1 MHz,
= 0
= 10 V
= 40 V, I
= 37.5 V, I
Test conditions
Test conditions
PAK-2
Test conditions
GS
, I
D
D
GS
D
GS
= 250 µA
= 90 A
= 60 A
D
= 10 V
= 0
= 120 A,
C
=125 °C
Min.
Min.
Min.
75
2
-
-
-
-
11800
Typ.
1060
Typ.
Typ.
154
2.2
394
171
34
70
71
50
36
STH210N75F6-2
Max.
Max.
Max.
100
100
2.8
-
-
1
-
-
4
Unit
Unit
Unit
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mΩ
µA
µA
nA
V
V