STH210N75F6-2 STMicroelectronics, STH210N75F6-2 Datasheet - Page 3

• Manufacturer Part Number: STH210N75F6-2
• Description: MOSFET N-CH 75V 180A H2PAK-2
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STH210N75F6-2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 171nC @ 10V
• Input Capacitance (ciss) @ Vds: 11800pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11251-2

STH210N75F6-2
1
Electrical ratings
Table 2.
1. Current limited by package.
Table 3.
1. When mounted on FR-4 board of 1 inch², 2 oz Cu.
R
Symbol
R
Symbol
thj-pcb
I
thj-case
P
DM
V
V
T
T
I
I
TOT
T
DS
GS
stg
D
D
l
j
(1)
(1)
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Storage temperature
Operating junction temperature
Absolute maximum ratings
Thermal data
Parameter
Parameter
C
Doc ID 018693 Rev 1
= 25 °C
GS
= 0)
C
C
= 25 °C
= 100 °C
- 55 to 175
Value
Value
± 20
180
150
720
300
300
0.5
35
75
2
Electrical ratings
W/°C
°C/W
°C/W
Unit
Unit
°C
°C
W
V
V
A
A
A
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