SI5457DC-T1-GE3 Vishay, SI5457DC-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI5457DC-T1-GE3
• Description: MOSFET P-CH 20V 6A CHIPFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5457DC-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 4.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 10V
• Power - Max: 5.7W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Si5457DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.01
0.1
0.1
2
1
2
1
www.vishay.com/ppg?67013.
10
10
-4
-4
0.05
0.02
0.1
0.05
Duty Cycle = 0.5
0.2
0.1
0.02
Duty Cycle = 0.5
0.2
Single Pulse
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
10
1
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
1
t
1
A
S10-2011-Rev. A, 06-Sep-10
= P
t
2
Document Number: 67013
DM
Z
thJA
100
thJA
t
t
1
2
(t)
= 95 °C/W
600
10