SI5457DC-T1-GE3 Vishay, SI5457DC-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI5457DC-T1-GE3
• Description: MOSFET P-CH 20V 6A CHIPFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5457DC-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 4.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 10V
• Power - Max: 5.7W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67013
S10-2011-Rev. A, 06-Sep-10
12
9
6
3
0
0
Package Limited
25
D
T
is based on T
C
50
Current Derating*
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
6
5
4
3
2
1
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
Si5457DC
www.vishay.com
125
150
5