SI5457DC-T1-GE3 Vishay, SI5457DC-T1-GE3 Datasheet
SI5457DC-T1-GE3
Specifications of SI5457DC-T1-GE3
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SI5457DC-T1-GE3 Summary of contents
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... Marking Code Bottom View Ordering Information: Si5457DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) ...
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... Si5457DC Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... Document Number: 67013 S10-2011-Rev. A, 06-Sep 2.0 2.5 3.0 1800 1500 1200 900 = 3.6 V 600 300 1.6 1.4 1 1.0 0.8 0 Si5457DC Vishay Siliconix ° 125 ° ° 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS ...
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... Si5457DC Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 T = 150 ° 0.1 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Forward Diode Voltage vs. Temperature 1.2 1.1 1 250 μA D 0.9 0.8 0.7 0.6 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.12 0.10 0.08 0. °C J 0.04 0. ...
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... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 67013 S10-2011-Rev. A, 06-Sep- 100 125 150 25 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si5457DC Vishay Siliconix 50 75 100 125 150 T - Case Temperature (°C) C Power Derating www.vishay.com 5 ...
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... Si5457DC Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... E 1.825 1.90 1.975 0.072 E 1.55 1.65 1.70 0.061 1 e 0.65 BSC L 0.28 − 0.42 0.011 S 0.55 BSC 5_Nom Package Information Vishay Siliconix Backside View DETAIL X INCHES Nom Max − 0.043 0.012 0.014 0.006 0.008 − 0.0015 0.120 0.122 ...
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... The addition of a further copper area and/or the addition of vias to other board layers will enhance the performance still further example of this method is implemented on the Vishay Siliconix Evaluation Board described in the next section (Figure 3). G THE VISHAY SILICONIX EVALUATION BOARD FOR THE SINGLE 1206-8 The ChipFET 1206-08 evaluation board measures 0 ...
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... AN811 Vishay Siliconix Front of Board ChipFETr THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the 1206-8 ChipFET measured as junction-to-foot thermal resistance is 15_C/W typical, 20_C/W maximum for the single device. The “foot” is the drain lead of the device as it connects with the body. This is identical to the ...
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... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR 1206-8 ChipFET Return to Index Return to Index www.vishay.com 2 ® 0.093 (2.357) 0.026 0.016 (0.650) (0.406) Recommended Minimum Pads Dimensions in Inches/(mm) 0.010 (0.244) Document Number: 72593 Revision: 21-Jan-08 ...
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