si5457dc Vishay, si5457dc Datasheet

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si5457dc

Manufacturer Part Number
si5457dc
Description
P-channel 20 V D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si5457dc-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si5457dc-T1-GE3
Manufacturer:
VISHAY
Quantity:
2 983
Part Number:
si5457dc-T1-GE3
0
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 95 °C/W.
Document Number: 67013
S10-2011-Rev. A, 06-Sep-10
Ordering Information: Si5457DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
- 20
(V)
D
1206-8 ChipFET
D
Bottom View
0.036 at V
0.041 at V
0.056 at V
D
D
S
D
R
DS(on)
D
GS
GS
GS
1
G
= - 4.5 V
= - 3.6 V
= - 2.5 V
(Ω)
J
= 150 °C)
b, f
Marking Code
BT
P-Channel 20 V (D-S) MOSFET
XXX
Part #
Code
I
D
- 6
- 6
- 6
(A)
a
a
a
Lot Traceability
and Date Code
d, e
A
Q
= 25 °C, unless otherwise noted)
12.5 nC
Steady State
g
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
C
C
C
A
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Portable Devices
Symbol
Symbol
T
R
R
Definition
- Load Switch
- Charger Switch
- Battery Switch
- DC/DC Converter
J
V
V
I
P
, T
thJA
thJF
I
DM
I
DS
GS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
45
18
- 55 to 150
- 6
- 5.2
- 1.9
2.3
1.2
Limit
± 12
- 4.8
- 20
- 6
- 6
- 20
260
5.7
a, b, c
3
b, c
b, c
a
a
b, c
b, c
Maximum
55
22
Vishay Siliconix
G
Si5457DC
P-Channel MOSFET
www.vishay.com
°C/W
S
D
Unit
Unit
°C
W
V
A
1

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si5457dc Summary of contents

Page 1

... Marking Code Bottom View Ordering Information: Si5457DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si5457DC Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... 2.0 2.5 3.0 1800 1500 1200 900 = 3.6 V 600 300 1.6 1.4 1 1.0 0.8 0 Si5457DC Vishay Siliconix ° 125 ° ° 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... Si5457DC Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 T = 150 ° 0.1 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Forward Diode Voltage vs. Temperature 1.2 1.1 1 250 μA D 0.9 0.8 0.7 0.6 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.12 0.10 0.08 0. °C J 0.04 0.02 0 0.8 1.0 1 100 125 150 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 67013 S10-2011-Rev. A, 06-Sep- 100 125 150 25 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si5457DC Vishay Siliconix 50 75 100 125 150 T - Case Temperature (°C) C Power Derating www.vishay.com 5 ...

Page 6

... Si5457DC Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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