SI5457DC-T1-GE3 Vishay, SI5457DC-T1-GE3 Datasheet - Page 10

• Manufacturer Part Number: SI5457DC-T1-GE3
• Description: MOSFET P-CH 20V 6A CHIPFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5457DC-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 4.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 10V
• Power - Max: 5.7W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Application Note 826
Vishay Siliconix
®
RECOMMENDED MINIMUM PADS FOR 1206-8 ChipFET
0.093
(2.357)
0.026
0.016
0.010
(0.650)
(0.406)
(0.244)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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Document Number: 72593
2
Revision: 21-Jan-08