IRF510A_Q Fairchild Semiconductor
IRF510A_Q
Manufacturer Part Number
IRF510A_Q
Description
MOSFET Power 100V .2 Ohm 33W
Manufacturer
Fairchild Semiconductor
Specifications of IRF510A_Q
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohms
Forward Transconductance Gfs (max / Min)
0.004 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.6 A
Power Dissipation
33 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
No
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