PSMN5R0-100ES,127 NXP Semiconductors, PSMN5R0-100ES,127 Datasheet - Page 6

• Manufacturer Part Number: PSMN5R0-100ES,127
• Description: MOSFET Power N-Ch 100V 5 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN5R0-100ES,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 338 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: I2PAK
• Gate Charge Qg: 170 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 9900pF @ 50V
• Power - Max: 338W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065165127

NXP Semiconductors
Table 6.
[1]
PSMN5R0-100ES
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
Measured 3 mm from package.
(S)
R
g
(m Ω )
fs
DSon
250
200
150
100
50
20
15
10
0
5
0
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
30
5
…continued
60
10
90
15
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
V
DS
003aaf723
003aaf725
I
= 25 A; V
= 25 A; dI
GS
D
(A)
Figure 17
= 50 V
(V)
120
20
Rev. 2 — 15 April 2011
GS
S
/dt = -100 A/µs; V
= 0 V; T
N-channel 100 V 5 mΩ standard level MOSFET in I2PAK
Fig 6.
Fig 8.
j
= 25 °C;
(A)
I
(A)
D
I
D
100
240
200
160
120
80
60
40
20
80
40
0
0
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Transfer characteristics: drain current as a
Output characteristics: drain current as a
GS
0
0
= 0 V;
0.5
20.0
PSMN5R0-100ES
T
j
2
= 175 ° C
10.0
8.0
6.0
5.5
Min
-
-
-
1
4
Typ
0.8
75
235
1.5
V
© NXP B.V. 2011. All rights reserved.
T
V
GS
j
GS
003aaf724
003aaf726
= 25 ° C
V
(V)
DS
(V) =5
Max
1.2
-
-
4.5
(V)
6
2
Unit
V
ns
nC
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