PSMN5R0-100ES,127 NXP Semiconductors, PSMN5R0-100ES,127 Datasheet - Page 11
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PSMN5R0-100ES,127
Manufacturer Part Number
PSMN5R0-100ES,127
Description
MOSFET Power N-Ch 100V 5 mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN5R0-100ES127.pdf
(14 pages)
Specifications of PSMN5R0-100ES,127
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
110 A
Power Dissipation
338 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
I2PAK
Gate Charge Qg
170 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
9900pF @ 50V
Power - Max
338W
Mounting Type
Through Hole
Lead Free Status / Rohs Status
Details
Other names
934065165127
NXP Semiconductors
8. Revision history
Table 7.
PSMN5R0-100ES
Product data sheet
Document ID
PSMN5R0-100ES v.2
Modifications:
PSMN5R0-100ES v.1
Revision history
20110415
20101227
Release date
•
Status changed from objective to product.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Objective data sheet
Rev. 2 — 15 April 2011
N-channel 100 V 5 mΩ standard level MOSFET in I2PAK
Change notice
-
-
PSMN5R0-100ES
Supersedes
PSMN5R0-100ES v.1
-
© NXP B.V. 2011. All rights reserved.
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