PSMN2R2-30YLC,115 NXP Semiconductors, PSMN2R2-30YLC,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN2R2-30YLC,115
• Description: MOSFET Power N-Ch 30V 2.15mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN2R2-30YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.15 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 141 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Gate Charge Qg: 55 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.15 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 1.95V @ 1mA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 3310pF @ 15V
• Power - Max: 141W
• Mounting Type: Surface Mount
• Lead Free Status / Rohs Status: Details
• Other names: 934065191115

NXP Semiconductors
Table 7.
PSMN2R2-30YLC
Product data sheet
Symbol
Q
Source-drain diode
V
t
Q
t
t
rr
a
b
Fig 6.
SD
oss
r
(A)
I
D
100
80
60
40
20
0
function of drain-source voltage; typical values
Output characteristics; drain current as a
0
Characteristics
10
Parameter
output charge
source-drain voltage
reverse recovery time
recovered charge
reverse recovery rise time
reverse recovery fall time
4.5
0.5
3.0
…continued
2.8
1
1.5
N-channel 30 V 2.15mΩ logic level MOSFET in LFPAK using NextPower
V
GS
All information provided in this document is subject to legal disclaimers.
003a a f 888
V
(V) =
DS
(V)
2.6
2.4
2.2
Conditions
V
T
I
see
I
V
V
dI
see
S
S
2
j
GS
GS
GS
S
Rev. 02 — 3 May 2011
= 25 °C
= 25 A; V
= 25 A; dI
/dt = -100 A/µs; V
Figure 17
Figure 18
= 0 V; V
= 0 V; V
= 0 V; I
GS
S
S
DS
DS
/dt = -100 A/µs;
= 25 A;
Fig 7.
= 0 V; T
= 15 V; f = 1 MHz;
= 15 V
R
(mΩ)
DS on
DS
8
6
4
2
0
of gate-source voltage; typical values
Drain-source on-state resistance as a function
j
0
= 15 V;
= 25 °C;
4
PSMN2R2-30YLC
Min
-
-
-
-
-
-
8
Typ
18.4
0.8
37
37
21
16
12
© NXP B.V. 2011. All rights reserved.
003a a f 889
V
GS
Max
-
1.1
-
-
-
-
(V)
16
Unit
nC
V
ns
nC
ns
ns
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